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FDMC4435BZ
+BOMMOSFET P-CH 30V 8.5A/18A 8MLP
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제조업체온세미
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제조업체 부품 #FDMC4435BZ
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데이터시트 FDMC4435BZ DataSheet
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재고6360
365 1일 품질 보증
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사양
| 속성 | 가치 |
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 8.5A (Ta), 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 20mOhm @ 8.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 46 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2045 pF @ 15 V |
| PowerDissipation(Max) | 2.3W (Ta), 31W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-MLP (3.3x3.3) |
개요
Description
This MOSFET is popular in a variety of applications, including DC-DC converters, load switches, and motor drives, due to its fast switching speed and ability to handle significant power levels. Additionally, its robust construction allows it to operate within a wide temperature range, providing reliability in different environmental conditions. Engineers and designers often choose the FDMC4435BZ when compact, efficient, and reliable switching is required in their circuit designs.
Equivalent
1. NXP PSMN1R5-30PL
2. Vishay Si2333DDS
3. Infineon BSS84
4. ON Semiconductor NTR4101PT1G
5. Diodes Incorporated DMN63D8L
Ensure to verify specifications like voltage, current, and package type to ensure compatibility with your application.
Features
1. P-Channel MOSFET: This device is a P-channel enhancement mode MOSFET, which is typically used for switching applications.
2. Voltage and Current Ratings: It operates with a maximum drain-source voltage (V_DS) of -30V and can handle a continuous drain current (I_D) of up to -8.4A at 25°C.
3. R_DS(on): The MOSFET has a low on-resistance, with values ranging from 20 mΩ to 29 mΩ depending on the gate-source voltage, which helps reduce power loss and improve efficiency.
4. Package Type: It comes in a Power33 package, known for its compact size and effective thermal performance.
5. Applications: Suitable for a wide range of applications including load switches, DC-DC converters, and general-purpose switching.
6. Performance: The FDMC4435BZ is designed to provide high-speed switching performance, making it ideal for applications requiring efficient power management.
These features make the FDMC4435BZ a popular choice for designers looking for reliable and efficient MOSFET solutions.
Pinout
1. Gate: This pin is used to control the MOSFET, turning it on or off depending on the voltage applied.
2. Source: This pin is the source terminal through which current enters the MOSFET.
3. Drain: This pin is the drain terminal through which current exits the MOSFET.
The FDMC4435BZ is designed for low-voltage applications and is often used in power management, load switching, and various other electronic applications. Its P-channel configuration means it conducts when the gate voltage is lower than the source voltage.