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FDMC8882
+BOMPOWER FIELD-EFFECT TRANSISTOR, 1
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제조업체온세미
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제조업체 부품 #FDMC8882
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재고2457
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사양
| 속성 | 가치 |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 10.5A (Ta), 16A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 14.3mOhm @ 10.5A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 20 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 945 pF @ 15 V |
| Power Dissipation (Max) | 2.3W (Ta), 18W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-MLP (3.3x3.3) |
개요
Description
Features
- Dual N-channel enhancement MOSFETs in a single power package
- Advanced MOSFET process (low Rds(on)) for high efficiency
- Low gate charge for fast switching and reduced drive power
- High pulsed current capability with good thermal performance
- Avalanche-energy rated for rugged inductive-load switching
- Suitable for synchronous buck/boost converters, motor drivers, and general high-speed switching
- Surface-mount package (8-pin) with compact footprint; RoHS compliant
- Available in automotive/industrial grade variants
Note: Exact specs (Vds, Rdson, Id, package type) depend on the specific variant. Please consult the datasheet for precise values.
Pinout
- Function: Dual N-channel enhancement-mode MOSFETs in a single package (FDMC8882), used as two power MOSFET switches in switching applications (e.g., DC-DC converters, synchronous rectification).
Manufacturer
Application
- High-efficiency DC-DC converters (buck/boost, synchronous rectification)
- Load-switches and power-path/ideal-diode applications
- Motor drive circuits (low- to mid-power)
- Battery management and protection circuits in portable devices
- Automotive and industrial power-management rails