사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 30A, 60A |
| Rds On(Max) @ Id Vgs | 8mOhm @ 13A, 10V |
| Vgs(th)(Max) @ Id | 2.7V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 29nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1765pF @ 15V |
| Power - Max | 1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
개요
Description
The FDMS3660S is a dual N-channel PowerTrench MOSFET from ON Semiconductor, designed for high-efficiency power conversion in applications like DC-DC converters, VRMs (Voltage Regulator Modules), and synchronous rectification.
### Key Features:
- Low On-Resistance (RDS(on)): 3.6 mΩ (max) at VGS = 10 V, reducing conduction losses.
- High Current Handling: Up to 60 A continuous drain current.
- Optimized for High-Frequency Switching: Low gate charge (Qg) and output capacitance (Coss) for improved efficiency.
- Compact Power56 Package: Enhances thermal performance and PCB space utilization.
- Wide Voltage Range: Supports 30 V drain-source voltage (VDS).
### Applications:
- Server/GPU power supplies
- POL (Point-of-Load) converters
- Motor drives & battery management
The FDMS3660S is ideal for high-current, high-efficiency designs requiring minimal power loss and compact form factors.
### Key Features:
- Low On-Resistance (RDS(on)): 3.6 mΩ (max) at VGS = 10 V, reducing conduction losses.
- High Current Handling: Up to 60 A continuous drain current.
- Optimized for High-Frequency Switching: Low gate charge (Qg) and output capacitance (Coss) for improved efficiency.
- Compact Power56 Package: Enhances thermal performance and PCB space utilization.
- Wide Voltage Range: Supports 30 V drain-source voltage (VDS).
### Applications:
- Server/GPU power supplies
- POL (Point-of-Load) converters
- Motor drives & battery management
The FDMS3660S is ideal for high-current, high-efficiency designs requiring minimal power loss and compact form factors.
Equivalent
Equivalent products to the FDMS3660S (a 30V N-channel MOSFET) include:
- Infineon IPD90N04S4-04
- Vishay SiR478DP
- ON Semiconductor NTMFS4C06N
- STMicroelectronics STL110N4LF6
These alternatives offer similar voltage (30V–40V), current ratings (~50A–100A), and low RDS(on). Verify specs like package (PowerPAK SO-8) and gate charge for compatibility. Always check datasheets for exact matching.
- Infineon IPD90N04S4-04
- Vishay SiR478DP
- ON Semiconductor NTMFS4C06N
- STMicroelectronics STL110N4LF6
These alternatives offer similar voltage (30V–40V), current ratings (~50A–100A), and low RDS(on). Verify specs like package (PowerPAK SO-8) and gate charge for compatibility. Always check datasheets for exact matching.
Manufacturer
The FDMS3660S is a power MOSFET manufactured by ON Semiconductor (now known as onsemi after rebranding in 2021).
onsemi is a global semiconductor company specializing in energy-efficient technologies, including power management, analog, and sensor solutions. It serves industries like automotive, industrial, and consumer electronics.
The FDMS3660S is part of their PowerTrench® MOSFET series, designed for high-efficiency power conversion applications.
onsemi is a global semiconductor company specializing in energy-efficient technologies, including power management, analog, and sensor solutions. It serves industries like automotive, industrial, and consumer electronics.
The FDMS3660S is part of their PowerTrench® MOSFET series, designed for high-efficiency power conversion applications.
Package
The FDMS3660S is a PowerTrench MOSFET from ON Semiconductor, available in a 5x6mm PQFN (Power Quad Flat No-Lead) package. This compact surface-mount package offers excellent thermal performance and low inductance, making it suitable for high-efficiency power applications like DC-DC converters and motor drives. The package designation is typically PQFN 5x6 or similar.
