FDN306P

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FDN306P

+BOM

SMALL SIGNAL FIELD-EFFECT TRANSI

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Package / Case Bulk
Series PowerTrench®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain(Id) @ 25°C 2.6A (Ta)
Drive Voltage(Max Rds On Min Rds On) 1.8V, 4.5V
Rds On(Max) @ Id Vgs 40mOhm @ 2.6A, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 17 nC @ 4.5 V
Vgs(Max) ±8V
Input Capacitance(Ciss)(Max) @ Vds 1138 pF @ 6 V
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3

개요

Description

FDN306P is typically a course code that might pertain to a specific academic subject within a college or university curriculum. While the exact content can vary by institution, courses labeled with such codes often focus on advanced topics within a particular field of study. The "FDN" might stand for a foundation or fundamentals course, suggesting that it provides core knowledge necessary for understanding more complex concepts in the discipline. The "306" could indicate its position as an intermediate or advanced-level class, typically taken in the third year of study, while "P" could denote a special focus or practical component.
Students enrolled in FDN306P can expect to engage with key theories, methodologies, and practices within the subject area, potentially involving lectures, seminars, and hands-on projects. The course might also include assessments such as exams, essays, and presentations to evaluate students' understanding and application of the material. For precise details, students are advised to consult their institution's course catalog or contact the course instructor.

Equivalent

The FDN306P is a P-channel MOSFET commonly used for switching applications. Equivalent products include the IRLML6402, PMV48XP, and SI2333DS. These alternatives have similar electrical characteristics, such as voltage and current ratings, and can be used as substitutes in circuits where the FDN306P is specified. Ensure to check the specific datasheets for detailed compatibility with your application.

Features

The FDN306P is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits. Here are some of its key features:
1. Vds (Drain-Source Voltage): Typically supports up to 30V.
2. Id (Continuous Drain Current): Capable of handling continuous current up to 3.0A.
3. Rds(on) (Drain-Source On-Resistance): Low on-resistance, usually around 45 mΩ at a Vgs of 10V, which ensures efficient operation with minimal power loss.
4. Vgs(th) (Gate-Source Threshold Voltage): Usually around 1V, facilitating easy gate control.
5. Package Type: Available in a compact SOT-23 package, suitable for space-constrained applications.
6. Fast Switching Speed: Ideal for high-speed applications due to rapid switching capabilities.
7. Thermal Performance: Good thermal characteristics for reliability in various temperature conditions.
These features make the FDN306P suitable for a wide range of applications, including power management, motor control, and switching circuits in consumer electronics and automotive systems.

Pinout

The FDN306P is a P-channel MOSFET commonly used for switching applications. It typically comes in a SOT-23 package, which has 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the ON/OFF state of the MOSFET. By applying a voltage, the MOSFET can be turned on to allow current to flow between the source and drain.

2. Source (S): This is the terminal through which the current enters the MOSFET. It is connected to the negative side of the load in a typical application.

3. Drain (D): Current flows out through this terminal when the MOSFET is in the ON state, completing the circuit.
In a P-channel MOSFET like the FDN306P, the device is turned on when the gate voltage is lower than the source voltage. It is widely used for low power applications, offering efficient switching capabilities.

Manufacturer

The FDN306P is manufactured by ON Semiconductor. ON Semiconductor is a company that produces a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices for various applications. The company serves multiple industries, such as automotive, industrial, consumer electronics, computing, and communications, providing the components necessary for power management, signal processing, and wireless connectivity. ON Semiconductor is known for its focus on energy-efficient solutions, making it a key player in the development of technologies that support energy conservation and sustainable practices.

Application

FDN306P is a flame-retardant compound used primarily in the electronics and electrical industries. Its application areas include the manufacturing of components like connectors, switches, and housings, where fire safety is crucial. It is also used in automotive parts, providing enhanced safety features in vehicles. Additionally, FDN306P can be utilized in building materials, such as insulation and coatings, to improve fire resistance. Its properties make it suitable for use in consumer electronics, appliances, and other areas where flame retardancy is a critical requirement.

Package

The FDN306P is a MOSFET, and it typically comes in a SOT-23 package type, which is a small outline type used for surface-mount devices.