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FDN338P
+BOMSMALL SIGNAL FIELD-EFFECT TRANSI
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제조업체비조 반도체 회사
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제조업체 부품 #FDN338P
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데이터시트 FDN338P DataSheet
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패키지 SOT-3
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사양
| 속성 | 가치 |
| Package / Case | Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 115mOhm @ 1.6A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 6.2 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 451 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
개요
Description
Equivalent
1. 2N7002P (though this is an N-channel MOSFET, some characteristics might overlap).
2. IRF9Z24N
3. AO3407
4. PMV16XNR
5. Si2301
When selecting an equivalent, ensure the specifications such as voltage, current, and package are compatible with your application. Always check the datasheets for precise matching.
Features
1. Type: N-channel MOSFET, which means it has an N-type channel and is used for switching and amplifying electronic signals.
2. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of up to 30V and a continuous drain current (I_D) of around 5.8A, allowing it to handle moderate power loads.
3. R_DS(on): This MOSFET has a low on-resistance (R_DS(on)) which minimizes power loss and heat generation, enhancing efficiency.
4. Package: Available in a standard SOT-23 package, making it compact and suitable for space-constrained applications.
5. Thermal Performance: It is designed to provide efficient thermal performance, suitable for portable and battery-powered devices.
6. Applications: Commonly used in applications such as DC-DC converters, load switches, and low-voltage applications due to its fast switching speed and efficiency.
These features make the FDN338P a versatile component in electronic design.
Pinout
The FDN338P has three pins, with the following functions:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can control the flow of current between the source and drain.
2. Source (S): This is the pin through which current enters the MOSFET. In a P-channel MOSFET, the source is usually connected to the positive supply voltage.
3. Drain (D): This pin allows current to flow out of the MOSFET when it is turned on.
These three pins allow the FDN338P to operate as an electronic switch or amplifier in various circuits. Its P-channel characteristic means it is turned on when the gate voltage is more negative relative to the source.