이미지는 참조용입니다.
FDN340P
+BOMSMALL SIGNAL FIELD-EFFECT TRANSI
-
제조업체비조 반도체 회사
-
제조업체 부품 #FDN340P
-
데이터시트 FDN340P DataSheet
-
패키지 SOT-3
-
재고3986
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Package / Case | Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 2A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 70mOhm @ 2A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 10 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 779 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
개요
Description
FDN340P is typically a course or module code that you might encounter in a university or educational program, though specific details can vary across institutions. Generally, it is advisable to consult the course catalog or syllabus of the specific institution offering this course for precise information. However, courses with such codes often fall under specialized or advanced study areas, possibly within a specific department like Food and Nutrition, Computer Science, or another technical field, depending on the institution's naming conventions.
In a broader educational context, an introductory course with a code like FDN340P might cover foundational principles, techniques, or methodologies pertinent to its discipline. If it's part of a progression, it could build upon lower-level prerequisite courses, offering deeper insights or more complex practical applications. Students interested in enrolling should ensure they meet any prerequisites, and they may consider reaching out to academic advisors or instructors for more detailed descriptions and expectations of the course content.
In a broader educational context, an introductory course with a code like FDN340P might cover foundational principles, techniques, or methodologies pertinent to its discipline. If it's part of a progression, it could build upon lower-level prerequisite courses, offering deeper insights or more complex practical applications. Students interested in enrolling should ensure they meet any prerequisites, and they may consider reaching out to academic advisors or instructors for more detailed descriptions and expectations of the course content.
Equivalent
The FDN340P is a P-channel MOSFET. Equivalent products include:
1. SI3460DV (Vishay)
2. 2N7002P (Fairchild/Nexperia)
3. IRLML6402 (International Rectifier)
4. PMV16XNR (Nexperia)
5. BSS84 (ON Semiconductor)
When selecting an equivalent, ensure the substitute meets the required voltage, current, and power ratings of your application. Always consult the datasheets for compatibility.
1. SI3460DV (Vishay)
2. 2N7002P (Fairchild/Nexperia)
3. IRLML6402 (International Rectifier)
4. PMV16XNR (Nexperia)
5. BSS84 (ON Semiconductor)
When selecting an equivalent, ensure the substitute meets the required voltage, current, and power ratings of your application. Always consult the datasheets for compatibility.
Features
The FDN340P is a P-channel MOSFET commonly used in electronic circuits for switching and amplifying signals. Below are its key features:
1. Configuration: P-channel enhancement mode MOSFET.
2. Voltage and Current Ratings: Typically supports a drain-source voltage (V_DS) of -25V and a continuous drain current (I_D) of approximately -3.7A.
3. Low On-Resistance: Offers low R_DS(on) values, which reduce power losses and increase efficiency in applications.
4. Package: Often available in a compact SOT-23 package, suitable for space-constrained applications.
5. Gate-Source Voltage: Usually operates with a gate-source threshold voltage (V_GS(th)) around -1V to -3V.
6. Thermal Performance: Designed to handle heat dissipation efficiently with a maximum junction temperature typically around 150°C.
7. Applications: Ideal for load switching, power management in portable devices, and DC-DC converters.
8. Fast Switching: Provides quick switching speeds suitable for high-frequency applications.
These features make the FDN340P a reliable choice for designers looking to implement efficient power management and signal switching in their electronic designs.
1. Configuration: P-channel enhancement mode MOSFET.
2. Voltage and Current Ratings: Typically supports a drain-source voltage (V_DS) of -25V and a continuous drain current (I_D) of approximately -3.7A.
3. Low On-Resistance: Offers low R_DS(on) values, which reduce power losses and increase efficiency in applications.
4. Package: Often available in a compact SOT-23 package, suitable for space-constrained applications.
5. Gate-Source Voltage: Usually operates with a gate-source threshold voltage (V_GS(th)) around -1V to -3V.
6. Thermal Performance: Designed to handle heat dissipation efficiently with a maximum junction temperature typically around 150°C.
7. Applications: Ideal for load switching, power management in portable devices, and DC-DC converters.
8. Fast Switching: Provides quick switching speeds suitable for high-frequency applications.
These features make the FDN340P a reliable choice for designers looking to implement efficient power management and signal switching in their electronic designs.
Pinout
The FDN340P is a P-channel MOSFET. It is typically housed in a SOT-23 package, which features 3 pins. Here are the functions of these pins:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to this pin, the MOSFET is turned on or off.
2. Source (S): This pin is typically connected to the negative side of the load or power supply in a P-channel MOSFET. Current flows from the source to the drain when the MOSFET is turned on.
3. Drain (D): This pin is connected to the load. When the MOSFET is turned on, current flows from the source to the drain.
The FDN340P is used in various applications for switching and amplification purposes due to its ability to handle relatively high currents and voltages.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to this pin, the MOSFET is turned on or off.
2. Source (S): This pin is typically connected to the negative side of the load or power supply in a P-channel MOSFET. Current flows from the source to the drain when the MOSFET is turned on.
3. Drain (D): This pin is connected to the load. When the MOSFET is turned on, current flows from the source to the drain.
The FDN340P is used in various applications for switching and amplification purposes due to its ability to handle relatively high currents and voltages.
Manufacturer
The FDN340P is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor company that designs and manufactures a wide range of semiconductor components for energy-efficient electronics, including power and signal management, logic, discrete, and custom devices. The company caters to various sectors, including automotive, industrial, cloud, and Internet of Things (IoT). Onsemi focuses on providing solutions that enhance energy efficiency, thereby contributing to sustainability and eco-friendly technologies.
Application
The FDN340P is a P-channel MOSFET known for its low on-resistance and compact package, making it suitable for various applications. Common application areas include power management in portable devices, such as smartphones and tablets, where it helps in efficient battery usage. It is also used in DC-DC converters, load switches, and battery protection circuits. Additionally, due to its capability to handle moderate power levels, it finds applications in LED drivers and as a component in automotive electronics where space-saving and efficiency are critical. Its reliability and efficiency make it a popular choice in consumer electronics and industrial applications.
Package
The FDN340P is a P-channel MOSFET, and it typically comes in a Surface-Mount Device (SMD) package, specifically the SuperSOT-3 (Thin Small Outline Transistor) package. This package is designed for efficient heat dissipation and compact size, suitable for high-density circuit boards.
