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FDN352AP

Name: FDN352AP
Rating: 4.8 (15 reviews)

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제조업체 부품 #FDN352AP
데이터시트 FDN352AP DataSheet
패키지 SOT23-3
재고1784

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사양

속성	가치
Package	Bulk
Series	PowerTrench®
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	30 V
Current-ContinuousDrain(Id)@25°C	1.3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	180mOhm @ 1.3A, 10V
Vgs(th)(Max)@Id	2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs	1.9 nC @ 4.5 V
Vgs(Max)	±25V
InputCapacitance(Ciss)(Max)@Vds	150 pF @ 15 V
PowerDissipation(Max)	500mW (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	SOT-23-3

개요

Description

The FDN352AP is a P-channel MOSFET from ON Semiconductor, designed for low-voltage, high-efficiency switching applications. Key features include:
- Voltage Rating: -30V (drain-to-source).
- Current Capacity: -5.7A (continuous drain current).
- Low On-Resistance: 50mΩ (max) at -10V gate drive, reducing power loss.
- Fast Switching: Optimized for high-speed performance.
- Compact Package: SOT-23, ideal for space-constrained designs.
Common uses include power management, load switching, and battery protection circuits in portable electronics. Its P-channel configuration simplifies circuit design by eliminating the need for a charge pump in high-side switching.
For detailed specs, refer to the datasheet from ON Semiconductor.

Equivalent

Equivalent products to the FDN352AP (P-channel MOSFET) include:
- FDN304P (Similar specs, different package)
- SI2301DS (P-channel, comparable ratings)
- DMG2305UX (Low Vgs, SOT-23 package)
- BSS84 (Widely used alternative)
Check datasheets for exact voltage/current ratings. All are SOT-23 packaged P-MOSFETs.

Pinout

The FDN352AP is a P-channel MOSFET in a SOT-23-3 package with 3 pins.
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the power supply (higher voltage for P-channel).
3. Drain (D) – Output connection to the load.
Key Features:
- -30V drain-source voltage (V_DS).
- -4.3A continuous drain current (I_D).
- Low on-resistance (R_DS(on)) for efficient switching.
Commonly used in power management, load switching, and battery protection circuits.