FDPF10N60ZUT

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FDPF10N60ZUT

+BOM

POWER FIELD-EFFECT TRANSISTOR, 9

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사양

속성 가치
Series UniFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1980 pF @ 25 V
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack

개요

Description

The FDPF10N60ZUT is a high-voltage N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various power applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 10A, making it suitable for high-voltage switching applications in power supplies and motor control.
This MOSFET offers low on-resistance (R_DS(on)), improving efficiency and reducing heat generation during operation. Its fast switching capabilities allow for high-frequency operation, essential for modern electronic devices. The device typically comes in a TO-220 package, facilitating easy heat dissipation.
The FDPF10N60ZUT is commonly used in applications such as DC-DC converters, inverters, and other switching power supplies. Proper thermal management and gate drive considerations are crucial for optimizing performance and reliability. Overall, it represents a reliable choice for engineers seeking efficient high-voltage solutions in their designs.

Equivalent

The FDPF10N60ZUT is a N-channel MOSFET. Equivalent products include the IRF1010, STP10NM60, and 10N60. Always verify electrical characteristics such as V_DS, I_D, and R_DS(on) for compatibility in your specific application.

Features

The FDPF10N60ZUT is a N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (Id) is 10A, providing adequate handling for various load requirements.
3. Rds(on): It features a low on-resistance (Rds(on)) typically around 0.5 ohms, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: The gate-to-source threshold voltage (Vgs(th)) is between 2V and 4V, allowing for effective switching control.
5. Package Type: Housed in a TO-220 package, it offers good thermal performance and ease of mounting.
6. Fast Switching: Designed for fast switching applications, it minimizes switching losses.
7. Applications: Commonly used in switch-mode power supplies, motor drives, and other high-efficiency power circuits.
Overall, the FDPF10N60ZUT combines high voltage, robust current capability, and efficiency, making it ideal for power electronics applications.

Pinout

The FDPF10N60ZUT is a N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the operation of the MOSFET. A voltage applied to the gate allows the current to flow between the drain and source.

2. Drain (D): This pin is where the current enters the device. It connects to the load in a typical application.
3. Source (S): This pin is where the current exits the device. It is typically connected to ground or the negative side of the power supply in switching applications.
The FDPF10N60ZUT is designed for high-voltage applications with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 10A. It is commonly used in power management and switching applications.

Manufacturer

The FDPF10N60ZUT is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor, founded in 1957, is known for its innovations in semiconductor technology. The company specializes in providing high-performance analog, power, and mixed-signal semiconductor solutions, serving various industries, including automotive, industrial, consumer electronics, and communications.
As a manufacturer of power MOSFETs like the FDPF10N60ZUT, Fairchild focuses on enhancing energy efficiency and performance in electronic devices. The FDPF10N60ZUT specifically is designed for applications requiring high voltage and high-speed switching, making it suitable for power supply circuits, motor drives, and other applications where efficient power management is critical.
In summary, Fairchild Semiconductor, as a part of ON Semiconductor, is a key player in the semiconductor industry, providing essential components that drive innovation and performance in modern electronics.

Application

The FDPF10N60ZUT is a N-channel MOSFET primarily used in power management applications. Its application areas include:
1. Switching Power Supplies: For efficient power conversion.
2. Motor Drives: In controlling brushless DC motors and other types.
3. Power Inverters: In renewable energy systems like solar inverters.
4. Lighting Control: For LED drivers and dimming circuits.
5. High-Frequency Applications: Due to its fast switching capabilities.
With a voltage rating of 600V and a current rating of 10A, it is suitable for high-voltage and high-current environments.

Package

The FDPF10N60ZUT is packaged in a TO-220 form factor. This package type allows for efficient heat dissipation and is commonly used for power MOSFETs, making it suitable for various applications in power electronics.

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