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FDPF20N50FT
+BOMPOWER FIELD-EFFECT TRANSISTOR, 2
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제조업체비조 반도체 회사
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제조업체 부품 #FDPF20N50FT
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데이터시트 FDPF20N50FT DataSheet
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사양
| 속성 | 가치 |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | UniFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 260mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 65 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 3390 pF @ 25 V |
| Power Dissipation (Max) | 38.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 |
개요
Description
Key specifications include a breakdown voltage of 500V and a continuous drain current of 20A. It features low on-state resistance, which helps in reducing power losses and improving efficiency. Its fast switching speed is beneficial in high-frequency applications.
The FDPF20N50FT comes in a TO-220 package, which is known for good heat dissipation properties. It includes protections like ESD (Electrostatic Discharge) to enhance the device's robustness. With these features, the FDPF20N50FT offers a balance of performance and cost, making it a popular choice for both industrial and consumer electronics applications.
Equivalent
1. STMicroelectronics STP24N60M2
2. ON Semiconductor NDFP20N50NZ
3. Vishay IRFP460
4. Infineon IPP60R099P6
Ensure that you check the detailed datasheets for exact matching characteristics, such as voltage, current ratings, and package type, as these can vary slightly between manufacturers.
Features
1. Voltage Rating: It supports a drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Capacity: The continuous drain current (I_D) is 20A, allowing it to handle moderate power loads.
3. R_DS(on): It has a low on-resistance of around 0.27 ohms, which contributes to efficient power delivery and reduces energy loss.
4. Fast Switching: Designed for rapid switching with minimal delay, enhancing performance in dynamic applications.
5. Thermal Performance: The device can effectively dissipate heat, assisted by TO-220F package, ensuring reliability under high-power conditions.
6. Avalanche Ruggedness: Built to withstand high-energy pulses, providing durability and reliability in demanding environments.
7. Applications: Suitable for use in power supplies, motor drives, and other power management scenarios.
These features make the FDPF20N50FT an efficient and reliable choice for managing power in various electronic systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching state. Applying a voltage to the gate pin enables the current flow between the drain and source when above a certain threshold.
2. Drain (D): This pin is where the current enters the MOSFET when it is in an 'on' state. It is connected to the high voltage side of the circuit.
3. Source (S): This pin is where the current exits the MOSFET, usually connected to the ground or the lower voltage side.
The FDPF20N50FT provides fast switching capabilities and high efficiency, making it suitable for various power management applications.
Manufacturer
Application
1. Power Supplies: Utilized in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Suitable for driving motors in industrial and consumer electronics.
3. Inverters: Employed in inverter circuits for renewable energy systems.
4. LED Drivers: Used in high-power LED driver circuits for lighting applications.
5. Audio Amplifiers: Functions in audio amplification systems due to its fast switching and high efficiency.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.