FDS6690A

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FDS6690A

+BOM

MOSFET N-CH 30V 11A 8SOIC

  • 제조업체온세미

  • 제조업체 부품 #FDS6690A

  • 패키지 SOIC-8

  • 재고2809

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사양

속성 가치
Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 11A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 12.5mOhm @ 11A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 16 nC @ 5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1205 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

개요

Description

The FDS6690A is an N-channel MOSFET by Fairchild Semiconductor (now ON Semiconductor). Key features:
- Voltage Rating: 30V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 9.5mΩ (max at VGS=10V)
- Fast Switching: Suitable for high-efficiency applications
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~1-2V)
Applications:
- Power management (DC-DC converters, motor control)
- Load switching (battery protection, LED drivers)
- Portable electronics
Package: TO-252 (DPAK), surface-mount.
A compact, efficient choice for medium-power switching. Check datasheet for thermal/electrical limits.

Features

The FDS6690A is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 9.5mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-speed applications
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~1-2V)
- Power Dissipation: 2.5W (max)
- Package: SOIC-8 (compact and surface-mountable)
Ideal for DC-DC converters, motor control, and power management in portable electronics.

Pinout

The FDS6690A is an N-channel MOSFET in an 8-pin SOIC package.
Pin Functions:
1. Pins 1, 2, 3 (Drain - D): Power input/output (connected internally).
2. Pin 4 (Gate - G): Controls switching.
3. Pins 5, 6, 7, 8 (Source - S): Ground/return path (connected internally).
Key Features:
- 30V Drain-Source Voltage (VDS)
- 60A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on) = 4.5mΩ @ VGS=10V)
- Fast switching for power applications.
Used in DC-DC converters, motor control, and power management.

Application

The FDS6690A is an N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Switching Circuits – Load switches, motor drivers.
3. Battery Protection – Overcurrent/overvoltage protection in portable devices.
4. Automotive Electronics – Power distribution, LED drivers.
5. Consumer Electronics – Power supplies, inverters.
Its low on-resistance (RDS(on)) and high efficiency make it suitable for high-performance, compact designs.

Package

The FDS6690A is a N-channel MOSFET available in an SO-8 (SOIC-8) surface-mount package. This compact package is widely used for power management applications, offering efficient thermal performance and space-saving design. The SO-8 is industry-standard, making it compatible with automated assembly processes.

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