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FDS9412
+BOMMOSFET N-CH 30V 7.9A 8SOIC
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제조업체온세미
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제조업체 부품 #FDS9412
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사양
| 속성 | 가치 |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.9A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | FDS94 |
개요
Description
Key specifications include a maximum drain-source voltage (V_ds) that allows for robust performance in demanding environments. Its fast switching capability enhances overall system efficiency and reduces heat generation. Additionally, the FDS9412 typically comes in a compact package, facilitating easy integration into circuit designs.
Engineered for reliability, it supports multiple application scenarios, including automotive and industrial systems. Designers can leverage its features to achieve improved efficiency and thermal management in their projects. Overall, the FDS9412 is a versatile choice for modern power electronics, catering to the growing demand for energy-efficient solutions.
Equivalent
Features
1. Low On-Resistance (Rds(on)): Provides efficient performance, reducing power loss and improving thermal management.
2. High Speed Switching: Suitable for fast switching applications, enhancing overall system performance.
3. Low Gate Charge (Qg): Minimizes drive power requirements, making it ideal for battery-operated devices.
4. Wide Operating Voltage Range: Supports a variety of input voltages, enhancing design flexibility.
5. Thermal Stability: Built to operate in harsher environments, with a robust thermal performance.
6. Compact Package: Available in a surface-mount package, saving board space and enabling higher-density designs.
7. Integrated Protection Features: Includes built-in ESD protection to ensure reliability.
These features make the FDS9412 suitable for applications like DC-DC converters, motor control, and power distribution in consumer electronics, automotive, and industrial systems.
Pinout
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - The drain for the first N-channel MOSFET.
3. Source 1 (S1) - The source for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - The drain for the second N-channel MOSFET.
6. Source 2 (S2) - The source for the second N-channel MOSFET.
7. Drain (D) - Common drain connection for both MOSFETs.
8. Source (S) - Common source connection for both MOSFETs.
This component is commonly used for power management applications, including load switching and DC-DC converters, due to its low on-resistance and high-speed switching capabilities.
Manufacturer
In 2016, Fairchild was acquired by ON Semiconductor, which expanded its portfolio and capabilities in the semiconductor sector. ON Semiconductor focuses on providing a wide range of semiconductor components, including power management, analog, and sensing solutions for various industries, including automotive, industrial, and consumer electronics.
The FDS9412 specifically is a dual N-channel MOSFET, commonly used in power management applications due to its efficient switching characteristics and low on-resistance. Companies like ON Semiconductor play a crucial role in advancing technology by offering innovative semiconductor products that support various electronic applications.