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FDT3N40TF
+BOMMOSFET N-CH 400V 2A SOT223-4
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제조업체온세미
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제조업체 부품 #FDT3N40TF
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사양
| 속성 | 가치 |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | UniFET™ |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400 V |
| Current - Continuous Drain(Id) @ 25°C | 2A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 3.4Ohm @ 1A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 6 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 225 pF @ 25 V |
| Power Dissipation (Max) | 2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-4 |
개요
Description
FDT3N40TF is a high‑voltage N‑channel power MOSFET (enhancement mode) used for switching in power electronics. The “400” typically points to a around 400 V drain‑to‑source rating, and it’s usually offered in a TO‑220F (fully isolated tab) style package. It’s designed to handle several amperes with relatively low on‑resistance, making it suitable for offline switch‑mode power supplies, motor drives, and DC‑DC converters. Gate drive is typically around 10 V for full enhancement (though some variants may be logic‑level). Key specs to verify in the datasheet are Vds, Id, Rds(on), gate charge (Qg), and switching characteristics, as these vary by manufacturer. Always consult the supplier’s specific datasheet for exact parameters and safe operating area.
Equivalent
I don’t have live web access to verify exact drop‑in equivalents. Please share the FDT3N40TF’s key specs (VDS, ID, RDS(on), package, single/dual, gate charge) or allow me to look it up online — then I can list pin‑ and spec‑compatible substitutes (typical candidates are other 400 V N‑channel MOSFETs from Infineon, ST, Vishay, ON Semiconductor).
Features
FDT3N40TF features (highlights):
- N-channel, enhancement-mode power MOSFET
- Vds = 400 V; Id (continuous) ≈ 3 A
- Rds(on) typically around 0.75–1.2 Ω (typical ~0.9 Ω)
- Vgs(th) ~ 2–4 V
- Fast switching with low gate charge
- Robust avalanche energy rating and intrinsic body diode
- Pb-free, RoHS compliant
- Available in common power-package options (through-hole and surface-mount); check datasheet for exact packaging and pinout
- N-channel, enhancement-mode power MOSFET
- Vds = 400 V; Id (continuous) ≈ 3 A
- Rds(on) typically around 0.75–1.2 Ω (typical ~0.9 Ω)
- Vgs(th) ~ 2–4 V
- Fast switching with low gate charge
- Robust avalanche energy rating and intrinsic body diode
- Pb-free, RoHS compliant
- Available in common power-package options (through-hole and surface-mount); check datasheet for exact packaging and pinout
Pinout
Pin count: 3 main pins (plus a metal/heatsink tab).
Functions:
- Pin 1 — Gate: voltage input that turns the N‑channel enhancement MOSFET on/off.
- Pin 2 — Drain: high‑voltage power input/output; internally tied to the tab (heatslug).
- Pin 3 — Source: return/emitter of the channel (ground or low side in typical circuits).
Note: FDT3N40TF is a 400 V N‑channel MOSFET (high‑voltage switching device); the package tab is usually connected to the Drain for heat dissipation.
Functions:
- Pin 1 — Gate: voltage input that turns the N‑channel enhancement MOSFET on/off.
- Pin 2 — Drain: high‑voltage power input/output; internally tied to the tab (heatslug).
- Pin 3 — Source: return/emitter of the channel (ground or low side in typical circuits).
Note: FDT3N40TF is a 400 V N‑channel MOSFET (high‑voltage switching device); the package tab is usually connected to the Drain for heat dissipation.
Manufacturer
Manufacturer: STMicroelectronics.
What kind of company: STMicroelectronics is a global semiconductor manufacturer and designer of integrated circuits and discrete components, specializing in power semiconductor devices (including power MOSFETs like the FDT3N40TF), analog and mixed-signal ICs, microcontrollers, sensors and power-management solutions.
What kind of company: STMicroelectronics is a global semiconductor manufacturer and designer of integrated circuits and discrete components, specializing in power semiconductor devices (including power MOSFETs like the FDT3N40TF), analog and mixed-signal ICs, microcontrollers, sensors and power-management solutions.
Application
FDT3N40TF is an N-channel high‑voltage MOSFET used as a switch in power electronics. Typical applications include:
- Offline switch-mode power supplies (flyback, buck/boost, PFC)
- High-voltage DC‑DC converters
- Inverters, UPS power stages, and energy‑storage systems
- Motor-drive power stages for small to medium motors
- Solar microinverters and related energy-management circuits
- General-purpose high-voltage switching in industrial electronics
(Uses a high-voltage, fast-switching N‑MOSFET suitable for compact, efficient power‑conversion designs.)
- Offline switch-mode power supplies (flyback, buck/boost, PFC)
- High-voltage DC‑DC converters
- Inverters, UPS power stages, and energy‑storage systems
- Motor-drive power stages for small to medium motors
- Solar microinverters and related energy-management circuits
- General-purpose high-voltage switching in industrial electronics
(Uses a high-voltage, fast-switching N‑MOSFET suitable for compact, efficient power‑conversion designs.)
Package
The FDT3N40TF is supplied in a DPAK (TO-252) surface-mount package (SMD).
