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FDT86113LZ

MOSFET N-CH 100V 3.3A SOT223-4

제조업체온세미
제조업체 부품 #FDT86113LZ
데이터시트 FDT86113LZ DataSheet
패키지 TO-261-4,TO-261AA
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사양

속성	가치
Package	Tape & Reel (TR),Cut Tape (CT)
Series	PowerTrench®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	100 V
Current-ContinuousDrain(Id)@25°C	3.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	100mOhm @ 3.3A, 10V
Vgs(th)(Max)@Id	2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs	6.8 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	315 pF @ 50 V
PowerDissipation(Max)	2.2W (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	SOT-223-4

개요

Description

The FDT86113LZ is a high-performance N-channel MOSFET designed for power management applications. Key features include:
- Low On-Resistance (RDS(on)): Enhances efficiency by minimizing power loss.
- High Current Handling: Suitable for demanding loads.
- Fast Switching Speed: Ideal for high-frequency circuits.
- Robust Thermal Performance: Ensures reliability under stress.
Common uses include DC-DC converters, motor control, and battery management systems. Its compact package (e.g., TO-252 or similar) makes it suitable for space-constrained designs.
For detailed specs, refer to the datasheet (voltage ratings, gate charge, etc.). Always verify compatibility with your circuit requirements.

Features

The FDT86113LZ is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 100A (continuous)
- Low On-Resistance (RDS(on)): Typically 1.3mΩ (at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Robust Design: Avalanche energy rated for reliability
- Package: TO-252 (DPAK) for compact PCB mounting
- Applications: Power supplies, motor control, DC-DC converters, and battery management
Its low RDS(on) and high current handling make it ideal for demanding power electronics.

Pinout

The FDT86113LZ is a P-channel MOSFET with the following key specifications:
- Pin Count: 3 pins (typically TO-252/DPAK package: Gate, Drain, Source).
- Function: Designed for power switching applications, it features:
- Low on-resistance (RDS(on)) for efficient current handling.
- High current capability (up to -12A continuous drain current).
- Voltage rating: -30V (drain-to-source).
- Logic-level gate drive (compatible with -10V to +20V V_GS).
Common uses include load switching, power management, and DC-DC conversion.

Manufacturer

The FDT86113LZ is manufactured by Fujitsu Device Technology (FDT), a subsidiary of Fujitsu Limited. FDT specializes in semiconductor devices, including power management ICs, RF components, and sensors. The company is known for its high-quality, reliable electronic components used in automotive, industrial, and consumer applications. Fujitsu Limited, its parent company, is a major Japanese multinational in IT and electronics.
FDT focuses on innovation and precision, catering to advanced technological needs. Its products are widely used in energy-efficient systems and IoT devices.

Package

The FDT86113LZ is typically packaged in a SOT-23 or SC-70 surface-mount package, commonly used for small-signal transistors. These compact packages are suitable for high-density PCB designs. For precise details, refer to the manufacturer's datasheet.