FGH20N60SFDTU

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FGH20N60SFDTU

+BOM

IGBT FIELD STOP 600V 40A TO247

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Part Status Obsolete
IGBT Type Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
Power - Max 165 W
Switching Energy 370µJ (on), 160µJ (off)
Input Type Standard
Gate Charge 65 nC
Td (on / off) @ 25°C 13ns/90ns
Test Condition 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 34 ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number FGH20

개요

Description

The FGH20N60SFDTU is a high-performance N-channel MOSFET designed for power switching applications. It features a voltage rating of 600V and a continuous drain current of 20A, making it suitable for use in high-voltage circuits. This device is known for its low on-resistance (R_DS(on)), which minimizes power losses during operation, enhancing efficiency in applications such as power supplies, motor drives, and inverters.
The FGH20N60SFDTU is housed in a TO-220 package, facilitating effective heat dissipation, essential for maintaining performance under high load conditions. Its fast switching capabilities allow for reduced switching losses, making it ideal for high-frequency applications.
Additionally, the MOSFET's gate threshold voltage is optimized for compatibility with various drive circuits, ensuring reliable operation in diverse environments. Overall, the FGH20N60SFDTU combines robust performance characteristics with efficiency, making it a popular choice in industrial and consumer electronics applications.

Equivalent

The FGH20N60SFDTU is a high-voltage N-channel MOSFET. Equivalent products include the STP20NM60, IRFBC30, and MTP20N60. Ensure to check the specific characteristics such as R_DS(on), V_DS, and current ratings for compatibility. Always refer to the manufacturer's datasheets for detailed specifications before substitution.

Features

The FGH20N60SFDTU is a high-voltage N-channel MOSFET designed for use in various power applications. Key features include:
1. Voltage Rating: Up to 600V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current of 20A, allowing for substantial load handling.
3. Low On-Resistance: With a typical Rds(on) of around 0.25 ohms, it minimizes conduction losses.
4. Fast Switching Speed: Designed for efficient switching, enhancing performance in power conversion.
5. Thermal Resistance: Offers low thermal resistance, ensuring effective heat dissipation.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and heat management.
7. Robustness: Provides reliable operation in harsh environments, suitable for industrial and automotive applications.
These features make the FGH20N60SFDTU ideal for use in power supplies, motor drives, and other high-efficiency applications.

Pinout

The FGH20N60SFDTU is a N-channel MOSFET used for power applications. It typically comes in a TO-220 package, which has a pin count of 3.
Pin Configuration:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to the ground or the negative side of the power supply.
Functions:
- The Gate pin receives voltage to turn the MOSFET on (allowing current to flow from Drain to Source) or off (stopping the current flow).
- The Drain pin connects to the load, facilitating the flow of current when the MOSFET is turned on.
- The Source pin is connected to the ground, allowing the current to complete its circuit.
Overall, this MOSFET is designed for high voltage and current applications, making it suitable for switching and amplification tasks in power electronics.

Manufacturer

The FGH20N60SFDTU is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, sensors, logic, timing, interface, discrete, and custom devices. The company serves various industries, including automotive, industrial, communications, computing, and consumer electronics.
Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has grown through a combination of organic growth and acquisitions. It focuses on sustainability and energy efficiency, providing solutions that help reduce energy consumption and improve performance in electronic systems. The company is known for its commitment to innovation and technology advancement, catering to the increasing demand for high-quality semiconductor products in a rapidly evolving market.

Application

The FGH20N60SFDTU is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key application areas include:
1. Switching Power Supplies: For voltage regulation and conversion.
2. Inverters: Utilized in renewable energy systems like solar inverters.
3. Motor Drives: In control circuits for electric motors.
4. Induction Heating: As part of circuits for heating applications.
5. Lighting Control: In LED drivers and dimmers.
6. Power Management: In automotive and industrial applications for efficient energy conversion.
Overall, it is favored for its high voltage and current handling capabilities.

Package

The FGH20N60SFDTU is housed in a TO-247 package type. This package is designed for high-power applications, providing excellent thermal performance and ease of mounting.

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