사양
| 속성 | 가치 |
| Package / Case | Tube |
| Part Status | Last Time Buy |
| IGBT Type | NPT and Trench |
| Voltage - Collector Emitter Breakdown(Max) | 1000 V |
| Current - Collector(Ic)(Max) | 60 A |
| Current - Collector Pulsed(Icm) | 120 A |
| Vce(on)(Max) @ Vge Ic | 2.9V @ 15V, 60A |
| Power - Max | 180 W |
| Input Type | Standard |
| Gate Charge | 275 nC |
| Td(on / off) @ 25°C | 140ns/630ns |
| Test Condition | 600V, 60A, 51Ohm, 15V |
| Reverse Recovery Time (trr) | 1.2 µs |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
개요
Description
The FGL60N100BNTDTU is a power transistor, specifically an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), commonly used in high-speed switching applications. It is designed to handle high voltage and current, typically providing a maximum drain-source voltage of 1000V and a continuous drain current of 60A. This makes it suitable for demanding applications such as power supplies, inverters, and motor control systems.
Key features of the FGL60N100BNTDTU include low on-resistance, which improves efficiency by minimizing power loss during operation, and fast switching capabilities, which make it ideal for high-frequency applications. The transistor is typically encapsulated in a TO-3P package, which provides a sturdy and thermally efficient design, aiding in heat dissipation and enhancing reliability.
Overall, the FGL60N100BNTDTU is valued for its performance in high-power and high-efficiency circuits, making it a go-to choice for engineers working on advanced electronic applications.
Key features of the FGL60N100BNTDTU include low on-resistance, which improves efficiency by minimizing power loss during operation, and fast switching capabilities, which make it ideal for high-frequency applications. The transistor is typically encapsulated in a TO-3P package, which provides a sturdy and thermally efficient design, aiding in heat dissipation and enhancing reliability.
Overall, the FGL60N100BNTDTU is valued for its performance in high-power and high-efficiency circuits, making it a go-to choice for engineers working on advanced electronic applications.
Equivalent
The FGL60N100BNTDTU is an IGBT (Insulated Gate Bipolar Transistor) commonly used in power electronics. Equivalent products might include IGBTs from manufacturers such as Infineon, STMicroelectronics, or Mitsubishi that have similar voltage and current ratings, such as the STGW60H60DFB or the IRG4BC30KD. Always verify the exact specifications such as voltage, current, switching speed, and package type to ensure compatibility.
Features
The FGL60N100BNTDTU is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency switching applications. Here are its key features:
1. Voltage and Current Ratings: It supports a collector-emitter voltage of 1000V and a continuous collector current of 60A, making it suitable for high-power applications.
2. Switching Speed: The device is optimized for fast switching speeds, which enhances efficiency in applications like inverters and motor drives.
3. Low Saturation Voltage: It features a low V_CE(sat), which reduces conduction losses and improves overall device efficiency.
4. Thermal Performance: The IGBT comes with a robust design that offers good thermal performance, often aided by a TO-247 package that facilitates efficient heat dissipation.
5. Ruggedness: It is built to handle high electrical stress, providing reliability in demanding environments.
6. Integrated Anti-Parallel Diode: Includes a fast recovery anti-parallel diode, which is beneficial for reverse recovery applications.
These characteristics make the FGL60N100BNTDTU suitable for use in power management applications, including renewable energy systems and industrial automation.
1. Voltage and Current Ratings: It supports a collector-emitter voltage of 1000V and a continuous collector current of 60A, making it suitable for high-power applications.
2. Switching Speed: The device is optimized for fast switching speeds, which enhances efficiency in applications like inverters and motor drives.
3. Low Saturation Voltage: It features a low V_CE(sat), which reduces conduction losses and improves overall device efficiency.
4. Thermal Performance: The IGBT comes with a robust design that offers good thermal performance, often aided by a TO-247 package that facilitates efficient heat dissipation.
5. Ruggedness: It is built to handle high electrical stress, providing reliability in demanding environments.
6. Integrated Anti-Parallel Diode: Includes a fast recovery anti-parallel diode, which is beneficial for reverse recovery applications.
These characteristics make the FGL60N100BNTDTU suitable for use in power management applications, including renewable energy systems and industrial automation.
Pinout
The FGL60N100BNTDTU is an IGBT (Insulated Gate Bipolar Transistor) designed for high-speed switching applications. It is typically used in power electronic circuits, including inverters, converters, and motor drives. The exact pin count and function can slightly vary based on packaging, but generally, these devices are available in standard TO-247 packages which commonly feature three pins:
1. Collector (C): This is the main terminal for the high voltage output. The collector is usually attached to the load in the circuit.
2. Gate (G): The gate is the control terminal of the IGBT. A voltage applied to the gate controls the conductivity between the collector and the emitter. This allows the device to switch on and off.
3. Emitter (E): This terminal acts as the return path for the current. It is usually connected to the ground or the negative side of the power supply.
To confirm the exact pin configuration, it is recommended to review the datasheet of the specific part number from the manufacturer.
1. Collector (C): This is the main terminal for the high voltage output. The collector is usually attached to the load in the circuit.
2. Gate (G): The gate is the control terminal of the IGBT. A voltage applied to the gate controls the conductivity between the collector and the emitter. This allows the device to switch on and off.
3. Emitter (E): This terminal acts as the return path for the current. It is usually connected to the ground or the negative side of the power supply.
To confirm the exact pin configuration, it is recommended to review the datasheet of the specific part number from the manufacturer.
Manufacturer
The FGL60N100BNTDTU is a product manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a semiconductor manufacturing company that specializes in providing a wide range of semiconductor solutions, including power and signal management, logic, discrete, and custom devices. The company focuses on delivering energy-efficient innovations to enable customers to reduce global energy use. It serves various sectors, including automotive, industrial, cloud, and IoT markets.
Application
The FGL60N100BNTDTU is a type of Insulated Gate Bipolar Transistor (IGBT) that is commonly used in various high-power applications. Its application areas include motor drives, induction heating, and power conversion systems. It's also suitable for use in uninterruptible power supplies (UPS), solar inverters, and welding equipment. The IGBT's high efficiency and fast switching capabilities make it ideal for these applications where managing high voltages and currents is crucial. Additionally, it's often found in automotive electronics for electric and hybrid vehicles, where it contributes to efficient energy management and power delivery.
Package
The FGL60N100BNTDTU is a N-channel MOSFET, and it typically comes in a TO-247 package. This type of package is designed for high-power applications, providing efficient heat dissipation and ease of mounting.
