FM24V01A-GTR

이미지는 참조용입니다.

FM24V01A-GTR

+BOM

IC FRAM 128KBIT I2C 3.4MHZ 8SOIC

  • 제조업체인피니티 테크놀로지

  • 제조업체 부품 #FM24V01A-GTR

  • 데이터시트 FM24V01A-GTR DataSheet

  • 재고2664

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Series F-RAM™
PartStatus Active
DigiKeyProgrammable Not Verified
MemoryType Non-Volatile
MemoryFormat FRAM
Technology FRAM (Ferroelectric RAM)
MemorySize 128Kbit
MemoryOrganization 16K x 8
MemoryInterface I2C
ClockFrequency 3.4 MHz
AccessTime 130 ns
Voltage-Supply 2V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 8-SOIC (0.154", 3.90mm Width)
SupplierDevicePackage 8-SOIC
BaseProductNumber FM24V01

개요

Description

The FM24V01A-GTR is a non-volatile ferroelectric random access memory (FRAM) device developed by Fujitsu. It features 1 Mbit (128 K x 8 bits) of memory capacity, which allows for fast read and write operations while retaining data without power. The FRAM technology combines the speed of SRAM with the non-volatility of flash memory, making it suitable for applications requiring frequent writes and endurance, as it can handle over a trillion write cycles.
Key features of the FM24V01A-GTR include a wide operating voltage range (2.7V to 3.6V), low power consumption, and high-speed data access (up to 1 MHz). It supports a standard SPI interface, making it easy to integrate into various microcontroller and embedded system designs. Applications commonly utilizing this FRAM include automotive electronics, smart meters, industrial automation, and consumer electronics, where reliability and data integrity are critical.

Equivalent

The FM24V01A-GTR is a 1 Mb (128 K x 8) ferroelectric RAM (FeRAM) chip. Equivalent products include the Cypress (Infineon) FM25L01-G, STMicroelectronics M24SR-D, and the Winbond W25Q128FV. These alternatives may vary slightly in features, packaging, or interface, so it's important to check specifications for specific application needs.

Features

The FM24V01A-GTR is a 1-Mbit (128K x 8) serial EEPROM designed for high-performance applications. Key features include:
1. Interface: Supports I2C communication, making it compatible with various microcontrollers and digital systems.
2. Voltage Range: Operates from 1.8V to 5.5V, allowing flexibility in power supply options.
3. Data Retention: Offers a minimum data retention period of 100 years, ensuring long-term reliability.
4. Write Endurance: Supports up to 1 million write cycles per memory cell, suitable for frequent data updates.
5. Fast Access: Provides fast read and write operations with an efficient internal architecture.
6. Page Write Capability: Allows page programming (up to 64 bytes), enhancing write efficiency.
7. Low Power Consumption: Features low active and standby currents, making it energy-efficient for battery-operated devices.
8. Temperature Range: Suitable for commercial applications, with operation typically from 0°C to 70°C.
These features make the FM24V01A-GTR ideal for applications such as consumer electronics, automotive, and industrial control systems.

Pinout

The FM24V01A-GTR is a 1-Mbit (128K x 8) ferroelectric random access memory (FRAM) device. It has a total of 8 pins. The pin configuration and their functions are as follows:
1. Vcc: Power supply voltage.
2. GND: Ground connection.
3. SDA: Serial data line for data input/output.
4. SCL: Serial clock line for synchronizing data transmission.
5. WP: Write protect pin; when asserted, it prevents writes to the memory.
6. HOLD: Hold pin; can be used to pause the communication without losing data.
7. A0: Address pin to select the device in multi-device configurations.
8. A1: Another address pin for device selection.
The FM24V01A-GTR operates with an I2C interface for communication, making it suitable for embedded applications requiring non-volatile memory with high endurance and fast write speeds.

Manufacturer

The FM24V01A-GTR is manufactured by Fujitsu Semiconductor America, Inc. Fujitsu is a global leader in information technology and communication solutions, providing a wide range of products and services in various sectors, including semiconductors, computing, and telecommunications. The company specializes in advanced technology and innovation, focusing on developing high-performance memory solutions, microcontrollers, and other semiconductor products.
Fujitsu originated in Japan and has a long history in electronics and computing technology. The FM24V01A-GTR specifically is a non-volatile memory device that utilizes ferroelectric RAM (FRAM) technology. It is designed for applications requiring fast writing speeds, low power consumption, and high endurance.
As part of the broader Fujitsu Group, Fujitsu Semiconductor America operates within the semiconductor industry, emphasizing research and development to deliver cutting-edge solutions to meet the demands of modern electronics and digital systems.

Application

The FM24V01A-GTR is a 1-Mbit (128K x 8) Ferroelectric RAM (FeRAM) device, ideal for applications requiring non-volatile memory with fast access times and high endurance. Key application areas include:
1. Industrial Automation: Storing configuration settings and parameters.
2. Consumer Electronics: Retaining user preferences in devices like TVs and remote controls.
3. Automotive: Non-volatile data logging and sensor calibration.
4. Medical Devices: Storing patient data safely and reliably.
5. Smart Cards and RFID: Secure data storage in financial and identification applications.
6. Telecommunications: Firmware storage and configuration in communication devices.
Its low power consumption and fast write capabilities make it suitable for these diverse applications.

Package

The FM24V01A-GTR is typically available in an 8-pin SOIC (Small Outline Integrated Circuit) package. This compact package design is suited for surface-mount applications, making it ideal for space-constrained environments.

FM24V01A-GTR과 관련된 제품