FM25V02A-DGQ

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FM25V02A-DGQ

+BOM

IC FRAM 256KBIT SPI 40MHZ 8DFN

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Package Tube
Series F-RAM™
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FRAM
Technology FRAM (Ferroelectric RAM)
MemorySize 256Kb (32K x 8)
MemoryInterface SPI
ClockFrequency 40 MHz
Voltage-Supply 2V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 8-WDFN Exposed Pad

개요

Description

The FM25V02A-DGQ is a non-volatile ferroelectric RAM (FRAM) chip designed by Cypress Semiconductor. It offers 256 kilobits (32K x 8) of memory and is noted for its fast write speeds, low power consumption, and high endurance. Unlike traditional EEPROM and flash memory, FRAM doesn't require a write delay and can endure significantly more write and erase cycles, making it ideal for applications requiring frequent data logging and rapid data access.
The chip operates over a wide voltage range, typically from 2.0V to 3.6V, and offers a high-speed serial peripheral interface (SPI) for communication with microcontrollers and other devices. It is commonly used in industrial automation, metering, medical devices, and other applications where data integrity and reliability are critical. The FM25V02A-DGQ is housed in a compact SOIC-8 package, making it easy to integrate into various electronic designs. Its robust performance and durability make it a reliable choice for developers seeking efficient, non-volatile memory solutions.

Equivalent

The FM25V02A-DGQ is a 256-Kbit serial F-RAM device. Equivalent products include:
1. Cypress CY15B102Q: 256-Kbit serial F-RAM
2. Adesto AT25DN256: 256-Kbit serial non-volatile memory
3. Rohm BR25H256: 256-Kbit serial EEPROM
These alternatives have similar memory capacities and serial interfaces, but always check the datasheet for compatibility in terms of voltage, speed, and pin configuration.

Features

The FM25V02A-DGQ is a 256-Kilobit ferroelectric RAM (FRAM) device. Key features include:
1. Non-Volatility: Retains data without power, providing the benefits of non-volatile memory with the speed and endurance of SRAM.
2. High Endurance: Supports virtually unlimited read/write cycles, far exceeding conventional non-volatile memories.
3. Fast Write Performance: Offers fast data write speeds, with no delay or need for write completion, enabling immediate data storage.
4. Low Power Consumption: Operates with minimal power requirements, making it suitable for battery-powered applications.
5. SPI Interface: Utilizes a Serial Peripheral Interface (SPI), facilitating easy integration with a wide range of processors and microcontrollers.
6. Wide Voltage Range: Operates over a broad voltage range, typically from 2.0V to 3.6V.
7. Data Integrity: Ensures high reliability and data integrity, crucial for industrial and automotive applications.
8. Compact Package: Comes in a small 8-pin SOIC package, ideal for space-constrained applications.
These attributes make it suitable for applications needing high-speed data access and reliability, such as in embedded systems, industrial automation, and medical devices.

Pinout

The FM25V02A-DGQ is a 256-Kbit FRAM (Ferroelectric Random Access Memory) device from Cypress Semiconductor. It is designed to offer non-volatile memory with fast write speeds and high endurance. The FM25V02A-DGQ comes in an 8-pin SOIC package. Here is a concise description of its pin configuration and function:
1. CS (Pin 1): Chip Select - Activates the device when low.
2. SO (Pin 2): Serial Data Output - Transfers data from the device.
3. WP (Pin 3): Write Protect - Protects the memory from being written when low.
4. VSS (Pin 4): Ground - Common ground reference.
5. SI (Pin 5): Serial Data Input - Transfers data into the device.
6. SCK (Pin 6): Serial Clock - Synchronizes data transmission.
7. HOLD (Pin 7): Hold - Pauses the serial communication without deselecting the device.
8. VDD (Pin 8): Power Supply - Provides the power required for the device operation.
These pins provide the necessary interface for communication and control of the FM25V02A-DGQ, making it suitable for applications requiring high-speed data storage.

Manufacturer

The FM25V02A-DGQ is manufactured by Cypress Semiconductor Corporation. Cypress Semiconductor is known for designing and manufacturing a wide range of semiconductor products, including flash memory, microcontrollers, and other integrated circuits. The company specializes in producing high-performance, mixed-signal, programmable solutions for a diverse set of applications across various industries, such as automotive, industrial, consumer electronics, and communications. In 2020, Cypress Semiconductor was acquired by Infineon Technologies, a German semiconductor manufacturer, which further expanded its portfolio and market reach. Infineon is recognized for its expertise in power systems, automotive solutions, security, and the Internet of Things (IoT), making it a significant player in the global semiconductor industry.

Application

The FM25V02A-DGQ is a 256-Kbit FRAM (Ferroelectric Random Access Memory) device offering non-volatile storage with fast write speed and high endurance. Its application areas include:
1. Data Logging: Ideal for storing sensor or process data in industrial and automotive systems.
2. Wearable Devices: Used for quick data recording and retrieval due to low power consumption.
3. Medical Devices: Suitable for storing patient data and ensuring data integrity.
4. Energy Meters: Used for power outage data retention in smart meters.
5. Automotive: Suitable for event data recorders and infotainment systems.
6. Embedded Systems: Useful for firmware storage and configuration data.
These applications benefit from FM25V02A-DGQ’s fast access times, endurance, and data retention capabilities.

Package

The FM25V02A-DGQ is a non-volatile F-RAM memory chip with a capacity of 256 Kb (32 K × 8) in an 8-pin SOIC (Small Outline Integrated Circuit) package type.

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