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FM28V020-SGTR
+BOMIC FRAM 256KBIT PARALLEL 28SOIC
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제조업체세프라스 반도체 회사
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제조업체 부품 #FM28V020-SGTR
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데이터시트 FM28V020-SGTR DataSheet
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패키지 28-SOIC
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재고1665
365 1일 품질 보증
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사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | F-RAM™ |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| MemorySize | 256Kb (32K x 8) |
| MemoryInterface | Parallel |
| WriteCycleTime-WordPage | 140ns |
| AccessTime | 140 ns |
| Voltage-Supply | 2V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 28-SOIC (0.295, 7.50mm Width) |
개요
Description
One of its key features is its fast read and write cycles, typically completed in less than 150 nanoseconds, making it suitable for real-time applications. It supports unlimited read/write cycles, overcoming limitations associated with EEPROM and flash memory technologies. The device operates on a single power supply, typically at 3.3 volts, and offers a 10-year data retention capability. It typically comes in a standard small-outline integrated circuit (SOIC) package for ease of integration into various hardware designs. The FM28V020-SGTR is highly reliable and suitable for environments demanding frequent and rapid data access without compromising data integrity.
Equivalent
Features
1. Non-Volatile Memory: Retains data without power, combining the speed of RAM with the persistence of flash.
2. High Endurance: Offers virtually unlimited read/write cycles, significantly higher than EEPROM or flash memory.
3. Fast Access Time: Provides fast read/write capabilities with an access time of approximately 60 ns.
4. Low Power Consumption: Designed for low power operation, making it suitable for battery-powered and energy-efficient applications.
5. No Delay Write Operations: Unlike EEPROM, it does not require a write delay, allowing immediate data writing.
6. Direct Parallel Interface: Compatible with most microprocessors, allowing simple integration.
7. Data Retention: Guarantees data retention for over 10 years without power.
These features make the FM28V020-SGTR ideal for applications requiring high reliability, fast access times, and robust endurance in data logging, industrial control, and mission-critical systems.
Pinout
Key functions and features of the FM28V020-SGTR include:
1. Non-Volatility: The memory retains data even when power is removed, combining the benefits of RAM's speed with non-volatility.
2. Fast Write Speed: It offers virtually unlimited write endurance, with write speeds similar to those of SRAM.
3. Low Power Consumption: It is designed for low power operation.
4. Parallel Interface: The device uses a parallel interface for data input and output.
5. Unlimited Read/Write Cycles: Unlike EEPROM or Flash, F-RAM supports a very high number of read/write cycles.
6. Direct Hardware Replacement: It can be used to replace battery-backed SRAM for applications that require data retention without a power source.
These features make the FM28V020-SGTR suitable for applications in data logging, industrial controls, and any system requiring immediate data preservation on power loss.