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FQA11N90C-F109

Name: FQA11N90C-F109
Rating: 4.8 (15 reviews)

+BOM

POWER FIELD-EFFECT TRANSISTOR, 1

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제조업체 부품 #FQA11N90C-F109
데이터시트 FQA11N90C-F109 DataSheet
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사양

속성	가치
Package / Case	Bulk
Part Status	Active

개요

Description

The FQA11N90C-F109 is an N-channel MOSFET from ON Semiconductor, designed for high-voltage, high-speed switching applications. Key features include:
- Voltage Rating: 900V
- Current Rating: 11A (continuous)
- Low On-Resistance (RDS(on)): 0.73Ω (typ.)
- Fast Switching: Optimized for efficiency in power supplies, inverters, and motor drives.
- Package: TO-3P, offering robust thermal performance.
This MOSFET is ideal for SMPS, lighting, and industrial systems requiring high breakdown voltage and low conduction losses. Its avalanche energy rating ensures reliability in harsh conditions.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the FQA11N90C-F109 (N-channel MOSFET, 900V, 11A) include:
- STP11NK90Z (STMicroelectronics)
- IRFBC40 (Infineon)
- FQP11N90C (Fairchild/ON Semiconductor)
- IXFH11N90 (IXYS)
These alternatives offer similar voltage, current ratings, and package compatibility. Verify datasheets for exact specifications.

Features

The FQA11N90C-F109 is an N-channel MOSFET with the following key features:
- Voltage Rating: 900V
- Current Rating: 11A (continuous)
- Low On-Resistance (RDS(on)): 0.73Ω (max)
- Fast Switching Speed: Optimized for high-efficiency applications
- Avalanche Energy Rated: Enhances ruggedness in inductive loads
- Low Gate Charge (Qg): Reduces switching losses
- TO-3P Package: Robust thermal performance
- Applications: Power supplies, motor drives, inverters
This MOSFET is designed for high-voltage, high-speed switching with low conduction losses.

Pinout

The FQA11N90C-F109 is a 900V, 11A N-channel MOSFET in a TO-3P (TO-247AD) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the high-voltage load.
3. Source (S) – Connected to ground/common.
Key Features:
- 900V breakdown voltage (VDSS)
- 11A continuous drain current (ID)
- Low on-resistance (RDS(on)) for efficient power handling
- Fast switching for high-frequency applications
Commonly used in power supplies, inverters, and motor drives.

Application

The FQA11N90C-F109 is a high-voltage N-channel MOSFET commonly used in:
1. Power Supplies – Switched-mode power supplies (SMPS), AC-DC converters.
2. Motor Control – Inverters, motor drives for industrial and automotive applications.
3. Lighting – LED drivers, ballast control.
4. Renewable Energy – Solar inverters, wind power systems.
5. Industrial Equipment – High-voltage switching circuits, welding machines.
Its 900V rating and low on-resistance make it suitable for high-efficiency, high-power applications.

Package

The FQA11N90C-F109 is a TO-3P(N) package type. This package is a through-hole, three-lead design commonly used for high-power transistors and MOSFETs, offering robust thermal performance and mechanical strength. It is suitable for applications requiring efficient heat dissipation.