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FQB44N10TM
+BOMMOSFET N-CH 100V 43.5A D2PAK
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제조업체온세미
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제조업체 부품 #FQB44N10TM
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데이터시트 FQB44N10TM DataSheet
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사양
| 속성 | 가치 |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 43.5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 39mOhm @ 21.75A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 62 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 1800 pF @ 25 V |
| Power Dissipation (Max) | 3.75W (Ta), 146W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
개요
Description
Manufactured by Fairchild Semiconductor, the FQB44N10TM is packaged in a TO-263 surface-mount package, providing compactness and efficiency for circuit integration. It is designed to operate with low gate charge, reducing the power loss and enhancing overall efficiency. The MOSFET's robust design allows it to handle varying temperatures and environmental conditions, making it reliable in both industrial and consumer electronics. Its combination of high performance and reliability makes the FQB44N10TM a popular choice in the design of power electronic systems.
Equivalent
1. IRF1010N: Similar voltage and current ratings.
2. IRF540N: Comparable performance for general purposes.
3. STP55NF06: Suitable for similar voltage and current applications.
4. FDP047N10: Offers similar characteristics.
Always verify the specifications like voltage, current, Rds(on), and package type before substituting to ensure compatibility with your application.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 100V.
2. Current Handling: The device supports a continuous drain current (I_D) of up to 44A under specific conditions.
3. R_DS(on): It has a low on-resistance, typically around 18 mΩ at a gate-source voltage (V_GS) of 10V, which improves efficiency by minimizing power loss.
4. Package Type: The FQB44N10TM is commonly available in a TO-263 (D2PAK) package, which is suitable for surface mounting and offers good thermal performance.
5. Temperature Range: It operates effectively within a wide temperature range, typically from -55°C to 175°C.
6. Applications: It is suitable for use in high-speed switching applications, motor drives, power converters, and other power management systems.
These features make it a versatile component for designers looking for durability and performance in power electronic circuits.
Pinout
1. Gate (G): This pin is used to control the conductivity between the drain and source. It is where the input signal is applied to turn the MOSFET on or off.
2. Drain (D): This pin is where the load is connected, and it is the terminal through which the current flows out of the MOSFET when it is in the conducting state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It is the return path for the current flowing through the drain.
The primary function of the FQB44N10TM is to switch or amplify electronic signals in applications such as power management, motor drives, and switching regulators. It offers features like high-speed switching and low on-resistance, which makes it efficient for use in high-power applications.
Manufacturer
Application
1. Power Supply Units (PSUs) - Used for switching and voltage regulation.
2. Motor Drivers - Facilitates control in DC motor driver circuits.
3. DC-DC Converters - Employed for efficient voltage conversion.
4. Battery Management Systems - Helps in charging and discharging regulation.
5. Automotive Applications - Utilized in various control systems due to its reliability.
6. Load Switches - Used for switching loads in electronic devices and systems.
These applications leverage the MOSFET's capability to handle high currents and voltages efficiently.