FQD10N20LTM

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FQD10N20LTM

+BOM

MOSFET N-CH 200V 7.6A TO252

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사양

속성 가치
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series QFET®
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain(Id) @ 25°C 7.6A (Tc)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V
Rds On(Max) @ Id Vgs 360mOhm @ 3.8A, 10V
Vgs(th)(Max) @ Id 2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 17 nC @ 5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 830 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 51W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak

개요

Description

The FQD10N20LTM is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This component is designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for medium to high voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 10A, allowing it to handle substantial current loads.
3. R_DS(on): The on-resistance is relatively low, which minimizes power loss and improves efficiency when the transistor is in the 'on' state.
4. Package: It is typically available in a TO-252 (DPAK) package, which provides a compact form factor suitable for surface mounting.
5. Applications: The FQD10N20LTM is commonly used in power management tasks such as DC-DC converters, motor drives, and various switching applications.
Overall, this MOSFET offers a balance of efficiency and performance for power handling tasks in electronic circuits.

Equivalent

The FQD10N20LTM is an N-channel MOSFET. Equivalent products include the IRF520, IRF530, and STP20NF06, which have similar voltage and current ratings. Always verify the specifications such as Vds, Id, Rds(on), and gate charge to ensure compatibility with your application before substituting.

Features

The FQD10N20LTM is an N-channel MOSFET designed for various electronic applications. Key features include:
1. Voltage and Current Ratings: It has a maximum drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 10A, making it suitable for medium to high-power applications.
2. Rds(on): The MOSFET offers a low on-resistance (Rds(on)) of approximately 0.28 ohms, enhancing efficiency by reducing power loss during operation.
3. Package: It is available in a TO-252 package, which provides good thermal performance and compactness for surface mount applications.
4. Thermal Characteristics: The device has a total power dissipation of around 2.5 watts, with a junction temperature range from -55°C to +175°C, allowing for reliable performance in various environmental conditions.
5. Applications: Typical applications include power management, load switching, and motor control.
These features make the FQD10N20LTM a versatile and efficient choice for driving and switching applications in both consumer electronics and industrial systems.

Pinout

The FQD10N20LTM is an N-channel MOSFET. It typically comes in a TO-252 package, which has three pins. The pin configuration is as follows:
1. Gate (G): This pin controls the flow of current between the drain and source. Applying a voltage to the gate allows current to flow through the MOSFET.

2. Drain (D): The drain is where the current enters the MOSFET when it is in the 'on' state.
3. Source (S): The source is where the current exits the MOSFET.
Additionally, the tab of the TO-252 package is usually connected to the drain, enhancing heat dissipation. The FQD10N20LTM is designed for high-speed switching applications and can handle a maximum voltage of 200V and a continuous current of up to 10A. It is commonly used in power management applications, including power conversion and motor control.

Manufacturer

The FQD10N20LTM is manufactured by ON Semiconductor, now branded as onsemi. onsemi is a global semiconductor company that focuses on supplying a broad portfolio of energy-efficient power and signal management, logic, standard, and custom devices. The company serves a wide variety of sectors including automotive, industrial, communications, computing, and consumer electronics. It is known for its commitment to providing solutions that enable energy-efficient innovations, empowering customers to reduce global energy use.

Application

The FQD10N20LTM is an N-channel MOSFET commonly used in applications requiring efficient power management and switching. Key application areas include:
1. Power Supply Units: Used in converters and inverters for efficient energy conversion.
2. Motor Control: Suitable for driving motors in various electronic devices.
3. LED Drivers: Helps in regulating power supply to LED lighting systems.
4. Battery Management Systems: Ensures efficient charging and discharging cycles.
5. Automotive Systems: Supports electronic control units and power distribution.
6. Consumer Electronics: Utilized in devices requiring efficient power handling.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.

Package

The FQD10N20LTM is a type of MOSFET, and it comes in a TO-252 package type, which is also known as a DPAK. This surface-mount package is commonly used for medium-power devices, providing a compact and efficient form factor suitable for various electronic applications.

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