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FQD13N10LTM
+BOMPOWER FIELD-EFFECT TRANSISTOR, 1
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제조업체비조 반도체 회사
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제조업체 부품 #FQD13N10LTM
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데이터시트 FQD13N10LTM DataSheet
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사양
| 속성 | 가치 |
| Package | Bulk |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 10A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 180mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 12 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 520 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 40W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252, (D-Pak) |
개요
Description
The FQD13N10LTM is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically used in electronic devices for switching and amplifying electronic signals. Key features of the FQD13N10LTM include its N-channel configuration, which allows it to conduct current more efficiently in one direction when activated by a voltage applied to its gate. This particular model is designed to handle a maximum drain-source voltage (V_DS) of 100 volts and can manage a continuous drain current (I_D) of up to 13 amperes, making it suitable for medium power applications.
The transistor is packaged in a TO-252, also known as a DPAK, which is a surface-mount package that offers a balance between performance and compactness, making it suitable for circuit boards where space is a concern. The MOSFET's low on-resistance enhances its efficiency by reducing power loss during operation, and it is often used in applications such as DC-DC converters, motor drives, and power management systems. Its design emphasizes reliability and robustness, essential for various industrial and consumer electronic applications.
The transistor is packaged in a TO-252, also known as a DPAK, which is a surface-mount package that offers a balance between performance and compactness, making it suitable for circuit boards where space is a concern. The MOSFET's low on-resistance enhances its efficiency by reducing power loss during operation, and it is often used in applications such as DC-DC converters, motor drives, and power management systems. Its design emphasizes reliability and robustness, essential for various industrial and consumer electronic applications.
Equivalent
The FQD13N10LTM is an N-channel MOSFET. Equivalent products are those with similar specifications, including breakdown voltage, current capacity, and on-resistance. Potential equivalents include:
1. IRF540N: 100V, 33A
2. STP40NF10: 100V, 40A
3. 2SK3561 100V, 12A
Ensure compatibility by comparing detailed datasheets for parameters like gate charge, threshold voltage, and package type. Always verify with the manufacturer or distributor for precise equivalents.
1. IRF540N: 100V, 33A
2. STP40NF10: 100V, 40A
3. 2SK3561 100V, 12A
Ensure compatibility by comparing detailed datasheets for parameters like gate charge, threshold voltage, and package type. Always verify with the manufacturer or distributor for precise equivalents.
Features
The FQD13N10LTM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. Here are its key features:
1. Voltage and Current Ratings: It typically has a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of around 13A, making it suitable for medium power applications.
2. R_DS(on): It offers a low on-state resistance, ensuring efficient current flow with minimal losses. This is crucial for reducing power dissipation and improving efficiency in circuits.
3. Package: The device is often available in a TO-252 package, which is known for its good thermal performance and compact size, suitable for surface-mount technology.
4. Temperature Range: It operates effectively within a wide temperature range, allowing for reliable performance in various environmental conditions.
5. Applications: Typically used in power management, motor control, and switching applications due to its robust performance characteristics.
6. Enhancement Mode: It is an enhancement-mode MOSFET, meaning it requires a positive gate-source voltage to conduct.
These features make the FQD13N10LTM versatile for use in both commercial and industrial applications.
1. Voltage and Current Ratings: It typically has a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of around 13A, making it suitable for medium power applications.
2. R_DS(on): It offers a low on-state resistance, ensuring efficient current flow with minimal losses. This is crucial for reducing power dissipation and improving efficiency in circuits.
3. Package: The device is often available in a TO-252 package, which is known for its good thermal performance and compact size, suitable for surface-mount technology.
4. Temperature Range: It operates effectively within a wide temperature range, allowing for reliable performance in various environmental conditions.
5. Applications: Typically used in power management, motor control, and switching applications due to its robust performance characteristics.
6. Enhancement Mode: It is an enhancement-mode MOSFET, meaning it requires a positive gate-source voltage to conduct.
These features make the FQD13N10LTM versatile for use in both commercial and industrial applications.
Pinout
The FQD13N10LTM is a MOSFET transistor. It is typically available in a DPAK (TO-252) package, which usually has three pins. The pin functions for a standard MOSFET in this package are:
1. Gate (G): This pin is used to control the operation of the MOSFET. Applying voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin through which current flows into the device when it is in the 'on' state.
3. Source (S): This is the pin through which current exits the device.
Additionally, the DPAK package often includes a metal tab that serves as a thermal and electrical connection, usually linked internally to the drain. The FQD13N10LTM is an N-channel MOSFET, meaning it conducts when a positive voltage is applied to the gate relative to the source. It is commonly used in power management and switching applications. Always refer to the specific datasheet for precise details and characteristics.
1. Gate (G): This pin is used to control the operation of the MOSFET. Applying voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin through which current flows into the device when it is in the 'on' state.
3. Source (S): This is the pin through which current exits the device.
Additionally, the DPAK package often includes a metal tab that serves as a thermal and electrical connection, usually linked internally to the drain. The FQD13N10LTM is an N-channel MOSFET, meaning it conducts when a positive voltage is applied to the gate relative to the source. It is commonly used in power management and switching applications. Always refer to the specific datasheet for precise details and characteristics.
Manufacturer
The FQD13N10LTM is manufactured by ON Semiconductor, now known as onsemi. onsemi is a leading semiconductor supplier that focuses on intelligent technology solutions. The company provides a wide range of products, including power and signal management, logic, discrete, and custom devices. These components serve various industries such as automotive, communications, computing, consumer electronics, industrial, and medical. onsemi's solutions are integral to the development of energy-efficient electronics, advanced power management systems, and sophisticated sensory and connectivity technologies.
Application
The FQD13N10LTM is an N-channel MOSFET that is commonly used in various applications due to its efficiency and reliability. Key application areas include:
1. Power Management: It is used in power supply circuits and DC-DC converters to enhance energy efficiency.
2. Automotive Systems: Useful for motor control and other automotive electronics requiring robust performance.
3. Consumer Electronics: Integrated into devices for efficient power regulation and circuit protection.
4. Industrial Equipment: Employed in automation systems and industrial power tools for reliable switching.
5. LED Lighting: Utilized in LED drivers for efficient current control.
These applications leverage its low ON-resistance and fast switching capabilities.
1. Power Management: It is used in power supply circuits and DC-DC converters to enhance energy efficiency.
2. Automotive Systems: Useful for motor control and other automotive electronics requiring robust performance.
3. Consumer Electronics: Integrated into devices for efficient power regulation and circuit protection.
4. Industrial Equipment: Employed in automation systems and industrial power tools for reliable switching.
5. LED Lighting: Utilized in LED drivers for efficient current control.
These applications leverage its low ON-resistance and fast switching capabilities.
Package
The FQD13N10LTM is a MOSFET transistor, and its package type is a DPAK (TO-252).
