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GD25Q16ETIGR
+BOM16MBIT NOR FLASH /3.3V /SOP8 150
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제조업체GigaDevice 반도체 (홍콩) 유한회사
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제조업체 부품 #GD25Q16ETIGR
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재고7656
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사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR |
| MemorySize | 16Mb (2M x 8) |
| MemoryInterface | SPI - Quad I/O |
| ClockFrequency | 133 MHz |
| WriteCycleTime-WordPage | 70µs, 2ms |
| AccessTime | 7 ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
개요
Description
The GD25Q16ETIGR operates with a supply voltage range of 2.7V to 3.6V and provides fast read, program, and erase capabilities. It features various security and protection mechanisms, including block protection and a write protection feature to prevent unintentional data loss. The chip is typically housed in a compact and environmentally friendly package, making it easy to integrate into space-constrained designs.
This flash memory is recognized for its reliability and endurance, suitable for applications that require frequent data writing and erasing. Its cost-effectiveness and performance make it a popular choice among designers and engineers.
Equivalent
1. Winbond W25Q16JV
2. Micron N25Q016A
3. Macronix MX25L1606E
4. Cypress (Infineon) S25FL116K
5. Adesto AT25SF161
These chips offer similar memory capacities and SPI interfaces, making them suitable alternatives for applications requiring such specifications. Always compare the exact electrical and timing specifications to ensure compatibility.
Features
1. Memory Capacity: 16Mb (2MB), organized as 2048 pages of 256 bytes each.
2. Interface: Supports standard SPI, dual SPI, and quad SPI modes for fast data transfers.
3. Performance: Operating speed up to 104 MHz, ensuring efficient read and write operations.
4. Supply Voltage: Operates within a voltage range of 2.7V to 3.6V.
5. Endurance and Data Retention: Offers 100,000 program/erase cycles per sector and data retention of over 20 years.
6. Sector Architecture: Divided into 512 sectors of 4KB and 32 blocks of 64KB, allowing flexible erasing.
7. Security Features: Includes software write protection and a one-time programmable (OTP) memory area.
8. Low Power Consumption: Features low-power standby and deep power-down modes.
9. Package: Comes in various package types suitable for different applications.
These features make the GD25Q16ETIGR suitable for applications requiring reliable, high-performance Flash memory.
Pinout
1. CS# (Chip Select): Activates the device when low.
2. DO/IO1 (Data Output/IO1): Serial data output.
3. WP# (Write Protect) / IO2: Used to write-protect the device or as an I/O pin in quad I/O mode.
4. VSS (Ground): Ground reference.
5. DI/IO0 (Data Input/IO0): Serial data input.
6. CLK (Serial Clock): Provides clock input for data transfer.
7. HOLD# / IO3: Pauses the serial communication or serves as an I/O pin in quad I/O mode.
8. VCC (Power Supply): Provides the power supply to the chip.
These pins support various operations such as read, write, and erase, crucial for flash memory functionality. The device supports standard SPI communication and is used in a variety of applications for data storage and retrieval.
Manufacturer
Application
1. Consumer Electronics: Used in devices like TVs, set-top boxes, and audio equipment for firmware storage.
2. Industrial Systems: Applied in industrial control systems for data logging and system configuration.
3. Automotive Electronics: Utilized for infotainment systems, navigation units, and firmware storage.
4. Networking Equipment: Employed in routers and switches for firmware and configuration data.
5. IoT Devices: Used for firmware storage in smart home devices and sensors.
These applications benefit from its reliability, fast access times, and low power consumption.