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HAT2173H-EL-E
+BOMMOSFET N-CH 100V 25A LFPAK
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제조업체미국 리사 전자 회사
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제조업체 부품 #HAT2173H-EL-E
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사양
| 속성 | 가치 |
| Supplier | Renesas Electronics America Inc |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 25A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 8V, 10V |
| Rds On(Max) @ Id Vgs | 15mOhm @ 12.5A, 10V |
| Vgs(th)(Max) @ Id | 6V @ 20mA |
| Gate Charge(Qg)(Max) @ Vgs | 61 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4350 pF @ 10 V |
| Power Dissipation (Max) | 30W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK |
개요
Description
HAT2173H-EL-E appears to refer to a specific course or module code that may be part of an academic curriculum, possibly related to a field such as humanities, arts, technology, or a specialized study area. Without specific details about the course, a general approach to understanding such introductions would include:
1. Objective: Understand the course's primary goal and what students are expected to learn or achieve by the end.
2. Content: Familiarize with the key topics, themes, or skills covered. This might include lectures, readings, assignments, or practical activities.
3. Structure: Note the course’s format, including duration, lecture schedule, and assessment methods (e.g., exams, projects, papers).
4. Prerequisites: Check if there are any prerequisites or recommended prior knowledge before enrolling.
5. Instructor Information: Know who is teaching the course and their background or expertise.
For precise information, consult the course catalog or institution offering HAT2173H-EL-E.
1. Objective: Understand the course's primary goal and what students are expected to learn or achieve by the end.
2. Content: Familiarize with the key topics, themes, or skills covered. This might include lectures, readings, assignments, or practical activities.
3. Structure: Note the course’s format, including duration, lecture schedule, and assessment methods (e.g., exams, projects, papers).
4. Prerequisites: Check if there are any prerequisites or recommended prior knowledge before enrolling.
5. Instructor Information: Know who is teaching the course and their background or expertise.
For precise information, consult the course catalog or institution offering HAT2173H-EL-E.
Equivalent
The HAT2173H-EL-E is a dual N-channel MOSFET. Equivalent products could include similar dual N-channel MOSFETs from manufacturers like Infineon, STMicroelectronics, or ON Semiconductor. Specific models could vary, so it is important to compare the voltage, current ratings, and package type to ensure compatibility. Always consult the datasheets for detailed specifications to find the best match.
Features
The HAT2173H-EL-E is an N-channel MOSFET designed for efficient power management and switching applications. Key features include:
1. Low On-Resistance: It offers low on-resistance, which enhances efficiency by minimizing power loss.
2. High-Speed Switching: The device supports rapid switching speeds, beneficial for applications requiring quick transitions.
3. Gate-Source Voltage: It can handle a gate-source voltage of ±20V, allowing for flexibility in design.
4. Maximum Drain Current: The MOSFET supports a maximum drain current suitable for various power applications.
5. Thermal Performance: It features efficient thermal performance, aiding in heat dissipation during operation.
6. Compact Package: The device comes in a compact package, making it suitable for space-constrained applications.
These features make the HAT2173H-EL-E ideal for use in DC-DC converters, motor drives, and other power management systems.
1. Low On-Resistance: It offers low on-resistance, which enhances efficiency by minimizing power loss.
2. High-Speed Switching: The device supports rapid switching speeds, beneficial for applications requiring quick transitions.
3. Gate-Source Voltage: It can handle a gate-source voltage of ±20V, allowing for flexibility in design.
4. Maximum Drain Current: The MOSFET supports a maximum drain current suitable for various power applications.
5. Thermal Performance: It features efficient thermal performance, aiding in heat dissipation during operation.
6. Compact Package: The device comes in a compact package, making it suitable for space-constrained applications.
These features make the HAT2173H-EL-E ideal for use in DC-DC converters, motor drives, and other power management systems.
Pinout
The HAT2173H-EL-E is a power MOSFET from Renesas Electronics. It typically comes in a package with an 8-pin configuration. This MOSFET is designed for use in DC-DC converters, load switches, and other power management applications. The device features low on-resistance and fast switching characteristics, making it suitable for efficient power management in electronic circuits. The specific function of each pin can depend on the manufacturer's datasheet, so it's advisable to refer to the official Renesas documentation for precise details on pin assignments and electrical characteristics.
Manufacturer
The HAT2173H-EL-E is manufactured by Renesas Electronics Corporation. Renesas is a prominent Japanese semiconductor company that designs and manufactures a wide range of semiconductor products, including microcontrollers, system-on-chip (SoC) solutions, and various analog and power devices. The company primarily serves industries such as automotive, industrial, home electronics, and information and communication technology. Renesas is known for its innovative solutions and comprehensive product offerings that address the demanding requirements of these sectors, helping its clients bring advanced, efficient, and reliable technologies to market.
Application
The HAT2173H-EL-E is a semiconductor component, typically a MOSFET or transistor, used in electronic circuits. Application areas include power management systems, motor control circuits, DC-DC converters, and switching regulators. It is commonly used in consumer electronics, automotive electronics, and industrial equipment for efficient power conversion and management. Additionally, it may be employed in lighting systems, battery management circuits, and renewable energy systems where high efficiency and reliability are required. Specific applications depend on the device's characteristics, such as voltage and current ratings.
Package
The HAT2173H-EL-E is a power MOSFET typically used in electronic applications, and it comes in a surface-mount package type known as SOP-8 (Small Outline Package with 8 pins). This package is designed for efficient heat dissipation and space-saving on printed circuit boards.
