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HMC1035LP6GE

Name: HMC1035LP6GE
Rating: 4.8 (15 reviews)

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IC CLOCK GEN 1:1 2.5GHZ 40-SMT

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데이터시트 HMC1035LP6GE DataSheet
패키지 QFN-40
재고7058

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사양

속성	가치
Package / Case	Bulk,Strip
Part Status	Obsolete
PLL	Yes
Input	Clock
Output	LVDS, LVPECL
Number of Circuits	1
Ratio - Input: Output	1:2
Differential - Input: Output	No/Yes
Frequency - Max	2.5GHz
Divider / Multiplier	Yes/No
Voltage - Supply	3.15V ~ 3.5V
Operating Temperature	-40°C ~ 85°C
Mounting Type	Surface Mount

개요

Description

The HMC1035LP6GE is a GaAs MMIC Low Noise Amplifier (LNA) from Analog Devices, designed for high-frequency applications (up to 40 GHz). Key features include:
- Frequency Range: 24–35 GHz (optimized for 5G, satellite, and radar systems).
- Low Noise Figure: ~2.5 dB (enhances signal clarity).
- High Gain: ~20 dB (improves weak signal reception).
- Compact Package: 6-lead LP6 (1.5×1.5 mm) for space-constrained designs.
- Supply Voltage: +3V (low power consumption).
Ideal for millimeter-wave communications, aerospace, and defense due to its performance, small size, and reliability.

Equivalent

Equivalent products to the HMC1035LP6GE (a 6 GHz to 26 GHz GaAs MMIC SPDT switch) include:
- HMC1114LP5E (DC-20 GHz SPDT switch)
- HMC344LP3E (DC-14 GHz SPDT switch)
- SKY13370-385LF (DC-6 GHz SPDT switch, lower frequency)
- ADRF5046 (DC-44 GHz SPDT switch, broader range)
For exact replacements, check frequency range, power handling, and package compatibility.

Features

The HMC1035LP6GE is a 6 GHz to 18 GHz GaAs MMIC Low-Noise Amplifier (LNA) with the following key features:
- Frequency Range: 6 GHz to 18 GHz
- Low Noise Figure: 2.5 dB (typical)
- High Gain: 20 dB (typical)
- High P1dB Output Power: +18 dBm
- Single +5V Supply Operation
- 50 Ω Matched Input/Output
- Compact 6-lead LP6 (3x3 mm) SMT Package
- ESD Protection (Class 1C)
Ideal for microwave radios, SATCOM, radar, and EW systems.

Pinout

The HMC1035LP6GE is a 6-pin SMT-packaged GaAs pHEMT MMIC Low Noise Amplifier (LNA) from Analog Devices.
Pin Functions:
1. RF IN (Pin 1): RF input (50Ω matched).
2. GND (Pins 2, 4, 6): Ground connections.
3. RF OUT (Pin 3): RF output (50Ω matched).
4. VDD (Pin 5): Supply voltage (typically +3V).
Key Features:
- Frequency range: 24–35 GHz (Ka-band).
- Low noise figure (2.5 dB typical).
- High gain (20 dB typical).
Designed for satellite, 5G, and radar applications.

Manufacturer

The HMC1035LP6GE is manufactured by Analog Devices, Inc. (ADI), a leading global semiconductor company specializing in high-performance analog, mixed-signal, and digital signal processing (DSP) integrated circuits. ADI is known for its innovation in precision data conversion, signal conditioning, and RF (radio frequency) technologies, serving industries like automotive, communications, industrial, and healthcare.
The HMC1035LP6GE is a GaAs MMIC I/Q Downconverter used in RF applications, reflecting ADI's expertise in advanced RF and microwave components.

Application

The HMC1035LP6GE is a GaAs MMIC Low Noise Amplifier (LNA) designed for high-frequency applications. Key application areas include:
- Radar Systems (military, automotive, and weather radar)
- Satellite Communications (VSAT, LEO/MEO/GEO satellite links)
- 5G & Wireless Infrastructure (millimeter-wave and microwave backhaul)
- Test & Measurement Equipment (signal analyzers, spectrum monitoring)
- Electronic Warfare (EW) & Defense Systems (jamming, signal intelligence)
Its low noise figure (1.5 dB) and high gain (18 dB) make it ideal for sensitive RF front-end designs.