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HMC681ALP5E
+BOMIC RF AMP LTE 0HZ-1GHZ 32SMT
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제조업체아날로그 디바이스(주)
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제조업체 부품 #HMC681ALP5E
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데이터시트 HMC681ALP5E DataSheet
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패키지 VFQFN-32
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재고7564
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사양
| 속성 | 가치 |
| Supplier | Analog Devices Inc. |
| Package | Strip |
| ProductStatus | Obsolete |
| Frequency | 0Hz ~ 1GHz |
| P1dB | 19dBm |
| Gain | 40dB |
| NoiseFigure | 2.8dB |
| RFType | LTE, WiMax |
| Voltage-Supply | 5V |
| Current-Supply | 184.5mA |
| TestFrequency | 350MHz ~ 1GHz |
| MountingType | Surface Mount |
| Package/Case | 32-VFQFN Exposed Pad |
개요
Description
Housed in a compact 5x5 mm leadless QFN package, the HMC681ALP5E features 24 pins and is optimized for ease of use and integration into RF circuits. It requires a single positive supply voltage, simplifying design efforts and reducing the component count. The amplifier provides a stable gain over its operating frequency range, ensuring consistent performance across different environments and applications.
The device is well-suited for use in cellular infrastructure, test equipment, and other RF applications where high reliability and performance are critical. Additionally, its robust ESD protection enhances its durability and longevity in demanding conditions.
Equivalent
1. Analog Devices ADL5330
2. Qorvo RFSA3713
3. Mini-Circuits ZX76-31R75PP+
4. Peregrine Semiconductor PE4312
5. NXP BGA7204
These equivalents should be verified for specific application requirements such as frequency range, gain control, and power handling to ensure compatibility.
Features
1. Wide Frequency Range: It supports frequencies from DC to 5 GHz, making it suitable for a broad range of RF applications.
2. High Output Power: This amplifier delivers a high output power, typically around 24 dBm, ensuring strong signal amplification.
3. Adjustable Gain: The device features digitally-controlled gain, allowing for precise gain settings to be adjusted via a 3-bit digital interface.
4. Linear Performance: It offers excellent linearity with a high third-order intercept point (IP3), making it ideal for linear amplification applications.
5. Integrated Bias Control: The HMC681ALP5E includes an on-chip bias control circuit that simplifies the design process and reduces the need for external components.
6. Compact Package: It comes in a 5 mm x 5 mm leadless package, which is compact and suitable for space-constrained applications.
These features make the HMC681ALP5E a reliable choice for various RF amplification needs, including wireless infrastructure, test equipment, and military communication systems.
Pinout
Key functions of the HMC681ALP5E include:
1. RF Switch: It is primarily used to route RF signals through different paths within a system, functioning as a Single Pole Double Throw (SPDT) switch.
2. High Isolation and Low Insertion Loss: These features are crucial for maintaining signal integrity and minimizing power loss across the switch.
3. Wideband Capability: Its frequency range makes it suitable for various applications, including telecommunications and instrumentation.
Please consult the manufacturer's datasheet for detailed pin configuration and additional specifications to ensure accurate implementation in your specific application.
Manufacturer
Application
1. Wireless Infrastructure: Used in base stations for signal conditioning and gain control.
2. Military and Aerospace: Suitable for radar systems and communication links requiring precise gain adjustment.
3. Test and Measurement Equipment: Utilized in RF testing systems for dynamic range adjustment.
4. Point-to-Point & Point-to-Multipoint Radios: Supports precise signal management in communication systems.
5. Microwave Radio Systems: Provides gain control for efficient signal processing.
These applications benefit from the VGA's wide frequency range and high linearity.