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HMC715LP3E
+BOMIC AMP LTE 2.1GHZ-2.9GHZ 16QFN
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제조업체아날로그 디바이스(주)
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제조업체 부품 #HMC715LP3E
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데이터시트 HMC715LP3E DataSheet
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사양
| 속성 | 가치 |
| Supplier | Analog Devices Inc. |
| Package | Strip |
| ProductStatus | Obsolete |
| Frequency | 2.1GHz ~ 2.9GHz |
| P1dB | 19.5dBm |
| Gain | 19dB |
| NoiseFigure | 0.9dB |
| RFType | LTE, WiMax |
| Voltage-Supply | 3V, 5V |
| Current-Supply | 95mA |
| MountingType | Surface Mount |
| Package/Case | 16-VFQFN Exposed Pad |
개요
Description
Key features of the HMC715LP3E include its low phase noise, which enhances signal integrity and system performance, and high output power, typically around 13 dBm. It also boasts a wide tuning voltage range, allowing for flexibility in frequency selection. The device is housed in a compact 3x3 mm leadless QFN package, which facilitates easy integration into circuits and reduces space requirements on PCBs.
The HMC715LP3E requires only a few external components, simplifying the design process and reducing overall system cost. Its robust performance and reliability make it an ideal choice for demanding RF applications where precision and stability are critical.
Equivalent
Features
1. Frequency Range: Operates from 1.5 GHz to 7.0 GHz, making it suitable for broadband and multi-band applications.
2. Low Noise Figure: Offers a low noise figure of approximately 1.3 dB, enhancing signal sensitivity and performance in RF systems.
3. High Gain: Provides a gain of 21 dB, contributing to improved signal strength.
4. Wide Dynamic Range: Exhibits a high input third-order intercept point (IP3) of +31 dBm, indicating good linearity and capability to handle high power levels.
5. Output Power: Delivers a typical output power of +13 dBm at 1 dB compression point.
6. Compact Package: Packaged in a 3x3 mm plastic surface-mount package, optimizing space for compact designs.
7. Power Supply: Operates with a single supply voltage of +5V.
8. Application Versatility: Suitable for use in radar, aerospace, and communication systems.
These features make the HMC715LP3E a robust choice for RF amplification in various advanced technological applications.
Pinout
The primary function of the HMC715LP3E is to amplify weak RF signals with low noise figure, providing high linearity and gain. This makes it suitable for use in a variety of applications, including wireless infrastructure, point-to-point radios, and general-purpose RF and microwave amplification.
Key features include a wide frequency range (from 1.5 GHz to 7 GHz), low noise figure, high gain, and excellent input/output return loss. The device typically operates with a supply voltage of 5V. Specific pin assignments include connections for RF input, RF output, DC biasing, and ground. Always refer to the manufacturer’s datasheet for detailed pin configurations and recommended usage to ensure proper implementation in your design.
Manufacturer
Application
1. Cellular Infrastructure: Enhancing signal quality in base stations and improving reception in cellular networks.
2. Microwave Radio: Used in point-to-point and point-to-multipoint communication systems.
3. Satellite Communications: Enhancing signal amplification in satellite transceivers.
4. Test Equipment: Integrated into RF test and measurement instruments for accurate signal analysis.
5. Military and Aerospace: Used in radar systems and secure communication devices for its low noise and high-performance capabilities.
These applications benefit from the amplifier's low noise figure, wide bandwidth, and high linearity.