HMC907ALP5E

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HMC907ALP5E

+BOM

IC MMIC PWR AMP 1/2W 32-QFN

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사양

속성 가치
Supplier Analog Devices Inc.
Package Strip
ProductStatus Active
Frequency 200MHz ~ 22GHz
P1dB 27dBm
Gain 14dB
NoiseFigure 3dB
RFType VSAT
Voltage-Supply 10V
Current-Supply 350mA
TestFrequency 22GHz

개요

Description

The HMC907ALP5E is a high-performance GaAs (Gallium Arsenide) MMIC (Monolithic Microwave Integrated Circuit) distributed power amplifier. It is designed for wideband applications and is suitable for use across a frequency range of 0.2 to 22 GHz. The amplifier provides a high gain of about 13 dB and delivers an output power of approximately 29 dBm at 1 dB compression point, making it suitable for use in test equipment, military, and space communication systems.
The device is housed in a compact 5x5 mm SMT (Surface Mount Technology) QFN (Quad Flat No-leads) package, facilitating easy integration into various systems. It features an efficient design with a typical power dissipation of 1.2 watts and operates on a supply voltage of +10 V. The HMC907ALP5E offers excellent input and output return loss and provides flat gain over its bandwidth, enhancing performance in wideband applications. The amplifier's robust construction ensures reliability and stability in demanding environments.

Equivalent

The HMC907ALP5E is a GaAs MMIC pHEMT Distributed Power Amplifier. Equivalent or similar products might include broadband power amplifiers from other manufacturers, such as the Analog Devices HMC8410, Mini-Circuits PHA-1+, or Qorvo's QPA series. When selecting an equivalent, ensure the frequency range, gain, power output, and other specifications meet your requirements. Always check the datasheets for detailed comparisons.

Features

The HMC907ALP5E is a versatile GaAs MMIC pHEMT distributed power amplifier designed for high-frequency applications. It operates within a frequency range of 0.2 GHz to 22 GHz, making it suitable for a wide array of RF and microwave applications. This amplifier delivers high linearity and gain, typically offering around 13 dB of gain. It provides an output power of approximately 24 dBm at 1 dB compression point, ensuring robust signal amplification.
Key features include a wide bandwidth, high output power, and excellent input and output return losses. The device operates with a supply voltage of 10V and typically draws a quiescent current of 150 mA. It is housed in a RoHS-compliant, 5x5 mm QFN package, which simplifies integration into compact designs. The HMC907ALP5E is ideal for use in test equipment, military, space, and communication systems where high performance across a wide frequency range is essential. Its robust design ensures reliability and efficiency in demanding environments.

Pinout

The HMC907ALP5E is a GaAs MMIC pHEMT Distributed Power Amplifier. It comes in a 32-lead 5x5 mm LFCSP (Lead Frame Chip Scale Package). This amplifier is designed for high-frequency applications, offering broadband performance from DC to 35 GHz.
In terms of function, the HMC907ALP5E provides high gain and output power, making it suitable for a variety of applications such as test instrumentation, military, defense, and other advanced communication systems. It features a typical gain of 13 dB, a noise figure of 2.5 dB, and a typical output IP3 of 30 dBm. The amplifier operates from a single positive supply voltage, simplifying its integration into systems.
For precise pin configuration and functions, it's recommended that users refer to the manufacturer's datasheet, which provides detailed information on each pin's role and how to properly integrate the amplifier into a circuit.

Manufacturer

The HMC907ALP5E is manufactured by Analog Devices, Inc. (ADI). ADI is a multinational company specializing in the design and manufacture of analog, mixed-signal, and digital signal processing integrated circuits. They produce a wide range of products, including sensors, converters, amplifiers, and radio frequency (RF) components, serving various industries such as automotive, communications, healthcare, and industrial automation. The company is known for its innovative solutions and high-performance products that are integral in enabling advanced technological applications.

Application

The HMC907ALP5E is a GaAs MMIC pHEMT Distributed Power Amplifier that is commonly used in a variety of applications due to its wide frequency range and high linearity. Key application areas include:
1. Test and Measurement Equipment: Utilized for high-frequency testing and instrumentation.
2. Military and Aerospace: Applied in radar systems and electronic warfare for its robustness and performance.
3. Telecommunications: Used in wireless infrastructure, including cellular networks, for signal amplification.
4. Microwave Radio Systems: Suitable for point-to-point and point-to-multipoint radio links.
5. Industrial and Scientific: Employed in systems requiring precise amplification over a broad frequency range.
These applications benefit from the amplifier's wide bandwidth, high output power, and excellent gain flatness.

Package

The HMC907ALP5E is packaged in a leadless 5 mm x 5 mm plastic surface-mount package.

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