이미지는 참조용입니다.
HMC998LP5E
+BOMIC RF AMP GP 100MHZ-20GHZ 32SMT
-
제조업체아날로그 디바이스(주)
-
제조업체 부품 #HMC998LP5E
-
데이터시트 HMC998LP5E DataSheet
-
재고4004
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Supplier | Analog Devices Inc. |
| Package | Strip |
| ProductStatus | Obsolete |
| Frequency | 100MHz ~ 20GHz |
| P1dB | 31dBm |
| Gain | 11dB |
| NoiseFigure | 4.5dB |
| RFType | General Purpose |
| Voltage-Supply | 15V |
| Current-Supply | 500mA |
| MountingType | Surface Mount |
| Package/Case | 32-VFQFN Exposed Pad |
개요
Description
The device comes in a compact 5x5 mm SMT package, which facilitates easy integration into various RF circuit designs. It features on-chip DC blocking capacitors and is internally matched to 50 ohms, reducing the need for external matching components. The HMC998LP5E also includes a bias control for adjusting the quiescent current to optimize performance for specific applications.
With its combination of high output power, excellent gain, and compact form factor, the HMC998LP5E is well-suited for demanding RF applications where space and performance are critical.
Equivalent
Features
1. Frequency Range: Operates from 6 to 10 GHz, making it suitable for various RF and microwave applications.
2. High Gain: Offers a typical gain of 23 dB, enhancing signal strength effectively.
3. Output Power: Delivers a typical saturated output power of 28 dBm, supporting robust signal transmission.
4. Efficiency: High Power Added Efficiency (PAE) of around 25% at saturation, optimizing power usage.
5. Input/Output Match: Internally matched to 50 ohms, simplifying integration into RF systems.
6. Supply Voltage: Operates with a supply voltage of 5V, making it compatible with standard power supplies.
7. Package: Comes in a compact 5x5 mm leadless QFN package, facilitating easy handling and integration in space-constrained designs.
These features make the HMC998LP5E suitable for use in applications like microwave radios, test equipment, and radar systems.
Pinout
The primary function of the HMC998LP5E is to serve as an RF power amplifier providing high gain and high output power for RF and microwave applications. It is designed to operate from 0.1 GHz to 20 GHz frequency range. This amplifier is commonly used in communication systems, test equipment, and instrumentation where wide bandwidth and flat gain are required. It features integrated I/Os, gain control, and enhanced ESD protection.
For detailed pin configuration and functions, referring to the datasheet is recommended as it provides comprehensive information on pin functions and typical application circuits.