ICMF062P900MFR

The ICMF062P900MFR is a 900V, 62A silicon carbide (SiC) MOSFET module designed for high-power, high-efficiency applications. It features low on-resistance (RDS(on)) and fast switching speeds, making it ideal for electric vehicles (EVs), renewable energy systems, and industrial power converters.
Key benefits include:
- High voltage tolerance (900V) for robust performance.
- Low conduction and switching losses, improving efficiency.
- Compact module design with integrated thermal management.
This module is suited for high-frequency, high-temperature environments, leveraging SiC technology for superior performance over traditional silicon-based devices.

Equivalent products to the ICMF062P900MFR (a 900mA, 6V P-channel MOSFET) include:
- Si2301DS (Vishay)
- DMG2305UX (Diodes Inc.)
- AO3401 (Alpha & Omega)
- FDN340P (ON Semiconductor)
These are P-channel MOSFETs with similar specs (6V, 1.5-4A, low RDS(on)). Verify exact parameters for your application.

The ICMF062P900MFR is a high-performance, low-profile inductor designed for power applications. Key features include:
- Inductance: 9 µH (±20%)
- Current Rating: Up to 6.2 A (saturation)
- DC Resistance (DCR): Low, typically 29 mΩ
- Operating Temperature: -40°C to +125°C
- Package: Compact, shielded, and RoHS-compliant
- Applications: Power supplies, DC-DC converters, and voltage regulators
Its shielded construction minimizes EMI, making it suitable for noise-sensitive circuits. The high current handling and low DCR enhance efficiency in high-power designs.

The ICMF062P900MFR is a surface-mount (SMD) multilayer ceramic capacitor (MLCC) in a 0603 package (1.6mm x 0.8mm). It offers 900pF capacitance, ±20% tolerance, and is rated for 50V. Designed for high-frequency applications, it features flexible termination for improved mechanical reliability. Suitable for compact PCB designs.