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IKW30N65ES5
+BOM-
제조업체인피니티 테크놀로지
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제조업체 부품 #IKW30N65ES5
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재고7638
365 1일 품질 보증
7*24 영업 시간 서비스 보증
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사양
| 속성 | 가치 |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Maximum Gate Emitter Voltage | - 20 V, 20 V |
| Series | TRENCHSTOP 5 S5 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 175 C |
| Unit Weight | 1.340411 oz |
| Factory Pack Quantity | 240 |
| Part # Aliases | SP001319678 IKW30N65ES5XKSA1 |
| Technology | Si |
| Configuration | Single |
| Collector - Emitter Voltage VCEO Max | 650 V |
| Collector - Emitter Saturation Voltage | 1.35 V |
| Continuous Collector Current at 25 C | 62 A |
| Pd - Power Dissipation | 188 W |
| Gate - Emitter Leakage Current | 100 nA |
| Tradename | TRENCHSTOP |
| Height | 5.21 mm |
| Length | 21.1 mm |
| Width | 16.13 mm |
| Operating Temperature | - 40 C to + 175 C |
개요
Description
Its fast switching capabilities enable efficient operation at high frequencies, making it suitable for high-speed applications. The IKW30N65ES5 also benefits from a rugged construction, ensuring robustness against voltage and thermal stresses. It is packaged in a TO-247 format, facilitating effective heat dissipation.
The MOSFET is particularly advantageous in applications requiring high efficiency and thermal management, such as renewable energy systems and electric vehicles. Overall, the IKW30N65ES5 is a valuable component for engineers seeking reliable and efficient solutions in power electronics.
Equivalent
Features
1. Voltage Rating: It has a drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It supports continuous drain current (I_D) of up to 30A, allowing for robust performance under load.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically low, enhancing efficiency and reducing heat generation during operation.
4. Fast Switching Speed: Optimized for high-speed switching, which is beneficial for applications like power supplies and converters.
5. Thermal Performance: It features good thermal stability, with a maximum junction temperature of 150°C, allowing for reliable operation in demanding conditions.
6. TO-247 Package: Offered in a TO-247 package, facilitating efficient heat dissipation and mounting.
These characteristics make the IKW30N65ES5 suitable for various applications, including switch-mode power supplies, motor drives, and industrial equipment.
Pinout
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation by applying a voltage.
2. Drain (D): The current flows into this pin when the MOSFET is on, connecting to the load.
3. Source (S): This pin serves as the return path for the current flowing out from the drain when the MOSFET is conducting.
4. Tab (or Heat Sink): This is not a functional pin but serves as a heat dissipation point, usually connected to the source.
The IKW30N65ES5 is designed for high-voltage applications, with a blocking voltage of 650V and a continuous drain current of up to 30A, making it suitable for power conversion and control applications.