IPA65R660CFD

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IPA65R660CFD

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사양

속성 가치
Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity 500
Technology Si
Shipping Restrictions Mouser does not presently sell this product in your region.
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain - Source Breakdown Voltage 650 V
Id - Continuous Drain Current 6 A
Rds On 1.544 Ohms
Vgs - Gate - Source Voltage - 20 V, + 20 V
Vgs th - Gate - Source Threshold Voltage 4 V
Qg - Gate Charge 22 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 27.8 W
Channel Mode Enhancement
Tradename CoolMOS
Configuration Single
Fall Time 10 ns
Height 16.15 mm
Length 10.65 mm
Rise Time 8 ns
Series CoolMOS CFD2
Transistor Type 1 N-Channel
Typical Turn - Off Delay Time 40 ns
Typical Turn - On Delay Time 9 ns
Width 4.85 mm
Part # Aliases IPA65R660CFDXKSA1 SP000838284 IPA65R660CFDXKSA1
Unit Weight 0.068784 oz

개요

Description

The IPA65R660CFD is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring efficient power management. Manufactured by Infineon Technologies, it features a rated voltage of 650V and a continuous drain current of up to 66A, making it suitable for high-voltage applications like power supplies, motor drives, and industrial equipment.
Key characteristics include a low on-resistance (RDS(on)), which minimizes conduction losses and enhances thermal performance. The device also exhibits fast switching speeds, aiding in reduced switching losses, which is vital for improving overall system efficiency.
The IPA65R660CFD is housed in a DPAK package, offering excellent thermal dissipation capabilities, and is optimized for operation in harsh environments. It is particularly well-suited for synchronous rectification, resonant converters, and other applications where efficiency is critical. Overall, the IPA65R660CFD combines high voltage, robust performance, and reliability, making it a preferred choice for modern power electronics designs.

Equivalent

The IPA65R660CFD is a 650V N-channel MOSFET. Equivalent products include the Infineon IPB65R660CFD, STMicroelectronics STP65R660CFD, and ON Semiconductor NTMFS5C645N. Ensure to compare specifications like Rds(on), package type, and thermal performance for the best match.

Features

The IPA65R660CFD is a high-performance N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, suitable for high-voltage applications.
2. Current Handling: It can handle continuous drain currents up to 66A, making it effective for robust power applications.
3. R_DS(on): The low on-resistance (R_DS(on)) of approximately 0.66 ohms enhances efficiency by minimizing power losses during operation.
4. Fast Switching: Designed for high-speed switching, it supports rapid turn-on and turn-off, ideal for applications like switch-mode power supplies (SMPS) and inverters.
5. Thermal Performance: Features a low thermal resistance, ensuring effective heat dissipation and reliability under high load conditions.
6. Packaging: Typically housed in a TO-247 package, allowing for easy integration into various circuits while providing good thermal management.
These attributes make the IPA65R660CFD suitable for applications in renewable energy, automotive, and industrial power systems.

Pinout

The IPA65R660CFD is a N-channel MOSFET from Infineon Technologies, specifically designed for high-efficiency applications. It comes in a TO-247 package with a pin count of 3.
The pin functions are as follows:
1. Gate (G) - This pin controls the MOSFET's switching on and off.
2. Drain (D) - The Drain pin is where the output current flows out of the MOSFET.
3. Source (S) - The Source pin is connected to the ground or the negative side of the power supply, completing the circuit.
This device is typically used in applications such as power management, motor drives, and converters due to its high voltage and current handling capabilities.

Manufacturer

The IPA65R660CFD is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon is a leading global provider of semiconductor and system solutions, specializing in various sectors including automotive, industrial power control, and security. The company designs and produces a wide range of products, including power semiconductors, microcontrollers, sensors, and system-on-chip solutions. Infineon's innovations focus on enhancing energy efficiency, safety, and connectivity in electronic systems. The IPA65R660CFD is a specific component in their product lineup, typically utilized in power applications, showcasing Infineon's commitment to delivering high-performance and reliable semiconductor solutions.

Application

The IPA65R660CFD is a high-performance N-channel MOSFET, primarily used in applications such as power management in industrial and automotive systems. It is suitable for DC-DC converters, power supplies, and motor control due to its low on-resistance and high-efficiency characteristics. Additionally, it finds applications in renewable energy systems, such as solar inverters, as well as in electric vehicles for battery management and drive control. Its ability to handle high voltages and currents makes it ideal for demanding applications requiring fast switching and thermal stability.

Package

The IPA65R660CFD is packaged in a TO-247 package type. This package is designed for high-power applications, providing excellent thermal performance and reliability.

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