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IPA65R660CFD
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제조업체인피니티 테크놀로지
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제조업체 부품 #IPA65R660CFD
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데이터시트 IPA65R660CFD DataSheet
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사양
| 속성 | 가치 |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 500 |
| Technology | Si |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 6 A |
| Rds On | 1.544 Ohms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 22 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 27.8 W |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Configuration | Single |
| Fall Time | 10 ns |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Rise Time | 8 ns |
| Series | CoolMOS CFD2 |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 40 ns |
| Typical Turn - On Delay Time | 9 ns |
| Width | 4.85 mm |
| Part # Aliases | IPA65R660CFDXKSA1 SP000838284 IPA65R660CFDXKSA1 |
| Unit Weight | 0.068784 oz |
개요
Description
Key characteristics include a low on-resistance (RDS(on)), which minimizes conduction losses and enhances thermal performance. The device also exhibits fast switching speeds, aiding in reduced switching losses, which is vital for improving overall system efficiency.
The IPA65R660CFD is housed in a DPAK package, offering excellent thermal dissipation capabilities, and is optimized for operation in harsh environments. It is particularly well-suited for synchronous rectification, resonant converters, and other applications where efficiency is critical. Overall, the IPA65R660CFD combines high voltage, robust performance, and reliability, making it a preferred choice for modern power electronics designs.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, suitable for high-voltage applications.
2. Current Handling: It can handle continuous drain currents up to 66A, making it effective for robust power applications.
3. R_DS(on): The low on-resistance (R_DS(on)) of approximately 0.66 ohms enhances efficiency by minimizing power losses during operation.
4. Fast Switching: Designed for high-speed switching, it supports rapid turn-on and turn-off, ideal for applications like switch-mode power supplies (SMPS) and inverters.
5. Thermal Performance: Features a low thermal resistance, ensuring effective heat dissipation and reliability under high load conditions.
6. Packaging: Typically housed in a TO-247 package, allowing for easy integration into various circuits while providing good thermal management.
These attributes make the IPA65R660CFD suitable for applications in renewable energy, automotive, and industrial power systems.
Pinout
The pin functions are as follows:
1. Gate (G) - This pin controls the MOSFET's switching on and off.
2. Drain (D) - The Drain pin is where the output current flows out of the MOSFET.
3. Source (S) - The Source pin is connected to the ground or the negative side of the power supply, completing the circuit.
This device is typically used in applications such as power management, motor drives, and converters due to its high voltage and current handling capabilities.