IPB180N04S4-00

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IPB180N04S4-00

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사양

속성 가치
Technology Si
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Series OptiMOS-T2
Factory Pack Quantity 1000
Subcategory Transistors
Part # Aliases IPB18N4S4XT SP000646176 IPB180N04S400ATMA1
Mounting Type SMD/SMT
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Height 4.4 mm
Length 10 mm
Width 9.25 mm
Unit Weight 0.056438 oz
Package / Case TO-263-7
Configuration Single
Tradename OptiMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain - Source Breakdown Voltage 40 V
Id - Continuous Drain Current 180 A
Rds On 800 uOhms
Vgs - Gate - Source Voltage - 20 V, + 20 V
Vgs th - Gate - Source Threshold Voltage 2 V
Qg - Gate Charge 286 nC
Pd - Power Dissipation 300 W
Channel Mode Enhancement
Fall Time 58 ns
Rise Time 24 ns
Transistor Type 1 N-Channel
Typical Turn - Off Delay Time 67 ns
Typical Turn - On Delay Time 53 ns
Qualification AEC-Q100
REACH - SVHC Details

개요

Description

The IPB180N04S4-00 is a high-performance N-channel MOSFET designed for use in various electronic applications, particularly in power management and switching circuits. It features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 180A at a specified temperature. This MOSFET is characterized by low on-resistance (R_DS(on)), which enhances its efficiency by minimizing power loss during operation.
Its fast switching capabilities make it suitable for applications such as power supplies, motor drives, and converters. The device typically comes in a TO-220 package, ensuring effective heat dissipation, which is crucial for high-current applications.
In summary, the IPB180N04S4-00 is ideal for engineers looking for a reliable and efficient solution for power electronic designs, offering robustness and performance in demanding environments.

Equivalent

The IPB180N04S4-00 is a N-channel MOSFET from Infineon. Equivalent products include the IRF180, STP180N04, and BSC180N04. Always verify specifications such as voltage, current, RDS(on), and package type to ensure compatibility for your specific application.

Features

The IPB180N04S4-00 is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V.
2. Current Handling: Capable of handling up to 180A continuous drain current (I_D).
3. Low R_DS(on): It features a very low on-resistance, typically around 4.5 mΩ, which minimizes power losses during operation.
4. Fast Switching: The device supports high-speed switching, making it suitable for applications like DC-DC converters and motor drives.
5. Package: Available in a TO-220 package, which aids in heat dissipation and easy mounting.
6. Thermal Performance: Designed for better thermal management, facilitating higher performance in compact designs.
7. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges typically from 2V to 4V, allowing it to be driven effectively by standard gate voltages.
These features make the IPB180N04S4-00 ideal for automotive, industrial, and consumer electronics applications.

Pinout

The IPB180N04S4-00 is an N-channel MOSFET manufactured by Infineon Technologies. It typically comes in a TO-220 package, which has a total of 3 pins.
Pin Configuration and Functions:
1. Gate (G) - This pin controls the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D) - This pin is where the current flows out of the MOSFET. It is connected to the load.

3. Source (S) - This pin is connected to ground or the negative side of the power supply.
The IPB180N04S4-00 is designed for high-efficiency applications, featuring low on-state resistance and high-speed switching capabilities, making it suitable for power management and conversion applications.

Manufacturer

The IPB180N04S4-00 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing a wide range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. Infineon is particularly known for its expertise in power semiconductors, microcontrollers, and sensors. The IPB180N04S4-00 specifically is a power MOSFET (metal-oxide-semiconductor field-effect transistor) that is used in applications requiring efficient power management, such as in power supplies and motor control systems. Infineon’s commitment to innovation and sustainability makes it a key player in the semiconductor industry, focusing on developing technologies that enable energy efficiency and reliability in electronic devices.

Application

The IPB180N04S4-00 is a high-performance N-channel MOSFET primarily used in power management applications. Key areas include:
1. DC-DC Converters: Efficient switching in buck, boost, and other converter topologies.
2. Motor Control: Used in driving electric motors in automotive, industrial, and consumer applications.
3. Power Supplies: Found in power supply units (PSUs) for computers and telecommunication equipment.
4. Solar Inverters: Key component in renewable energy systems for converting DC to AC.
5. LED Drivers: Utilized in lighting applications for efficient current control.
Its high current and low on-resistance characteristics make it suitable for these applications.

Package

The IPB180N04S4-00 is packaged in a TO-220 format. This package type is designed for high-power applications, providing efficient heat dissipation and ease of mounting on heatsinks.

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