이미지는 참조용입니다.
IPB320N20N3 G
+BOMMOSFETs N-Ch 200V 34A D2PAK-2 OptiMOS 3
-
제조업체인피니티 테크놀로지
-
제조업체 부품 #IPB320N20N3 G
-
데이터시트 IPB320N20N3 G DataSheet
-
재고21140
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Packaging | MouseReel |
| Standard Pack Qty | 1000 |
개요
Description
The prefix "IPB" often suggests a brand or series identifier, while "320N20N3" might indicate technical specifications like current, voltage ratings, or package type. The "G" at the end could denote a specific feature or version, such as RoHS compliance or a lead-free component.
If you're dealing with this component, it is essential to consult the datasheet provided by the manufacturer for detailed specifications, electrical characteristics, thermal properties, and application guidance. This information ensures the component is used correctly and safely in its intended application, meeting system requirements and maintaining reliability.
Equivalent
1. IRFP4768: Similar voltage and current ratings.
2. STP200N20: Comparable specifications and performance.
3. IXFH200N20: Offers similar electrical characteristics.
4. FDP020N06: Another MOSFET with closely matched specs.
When selecting equivalents, verify key parameters like voltage, current, Rds(on), and package to ensure compatibility with your application.
Features
1. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_ds) of 200V and a continuous drain current (I_d) of up to 120A.
2. Low On-Resistance: The MOSFET has a low R_ds(on) value, which minimizes power losses and enhances efficiency in switching applications.
3. High-Speed Switching: Designed for fast switching with low gate charge (Q_g), allowing for efficient performance in high-frequency circuits.
4. Thermal Performance: It comes in a TO-263 package that provides good thermal dissipation, ensuring stable operation under high power conditions.
5. Robust Design: The device is designed to withstand high energy in avalanche mode and offers protection against high voltage transients.
6. Applications: It is commonly used in applications such as DC-DC converters, motor drives, and synchronous rectification in power supplies.
These features make the IPB320N20N3 G suitable for use in various industrial, automotive, and consumer electronics power management solutions.
Pinout
1. Gate (G): This pin is used to control the MOSFET by applying a suitable voltage to turn the device on or off.
2. Drain (D): This pin is connected to the main source of power and is where the current flows from when the MOSFET is in the conducting state.
3. Source (S): This pin is connected to the load or circuit ground. It serves as the return path for the current when the MOSFET is conducting.
The primary function of the IPB320N20N3 G is to act as a switch or amplifier in power management applications, controlling large currents with a smaller input voltage. It is designed for high efficiency and low on-state resistance, making it suitable for applications like power supplies, motor drives, and other high-power circuits.
Manufacturer
Application
1. Automotive Systems: Used in electric and hybrid vehicles for powertrain and battery management.
2. Power Supplies: Integral in switched-mode power supplies (SMPS) for improved energy efficiency.
3. Industrial Automation: Employed in motor drives and control systems for enhanced performance.
4. Renewable Energy: Utilized in solar inverters and wind energy systems for reliable power handling.
5. Consumer Electronics: Applied in power adapters and chargers for devices requiring efficient power management.
Its high current and voltage ratings, combined with low on-resistance, make it suitable for these demanding applications.