이미지는 참조용입니다.
IPD50N04S3-08
+BOM-
제조업체인피니티 테크놀로지
-
제조업체 부품 #IPD50N04S3-08
-
데이터시트 IPD50N04S3-08 DataSheet
-
재고9662
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 2500 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Type | SMD/SMT |
| Package / Case | DPAK-3 (TO-252-3) |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 40 V |
| Id - Continuous Drain Current | 50 A |
| Rds On | 8 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 27 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 68 W |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Configuration | Single |
| Fall Time | 6 ns |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Rise Time | 7 ns |
| Series | OptiMOS-T |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 16 ns |
| Typical Turn - On Delay Time | 11 ns |
| Width | 6.22 mm |
| Part # Aliases | IPD5N4S38XT SP000261218 IPD50N04S308ATMA1 |
| Unit Weight | 0.011640 oz |
| Qualification | AEC-Q100 |
개요
Description
The device is housed in a TO-220 package, which aids in effective heat dissipation. Its fast switching speeds enhance performance in high-frequency applications. The IPD50N04S3-08 is optimized for low gate charge (Qg), which reduces drive losses and enhances overall efficiency.
This MOSFET is commonly used in DC-DC converters, inverters, and other high-efficiency power management systems. Its robust specifications make it a reliable choice for engineers seeking durable and efficient solutions in their designs.
Equivalent
Features
1. Voltage Rating: Maximum drain-source voltage (VDS) of 40V, allowing for use in various power management applications.
2. Current Rating: Capable of handling continuous drain current (ID) up to 50A, making it suitable for high current applications.
3. RDS(on): Low on-state resistance (RDS(on) typically 8 mΩ), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Low gate threshold voltage (VGS(th)), enabling easy drive compatibility with various logic levels.
5. Thermal Performance: Features a robust package with good thermal dissipation properties, ensuring reliability under high load conditions.
6. Fast Switching: High-speed switching capability, which is beneficial for applications like DC-DC converters and motor drives.
7. Package Type: Typically available in a TO-220 or similar package for efficient heat management.
These features make the IPD50N04S3-08 ideal for power supplies, automotive applications, and other demanding environments.
Pinout
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The main current-carrying terminal, where the load is connected.
3. Source (S): The terminal through which current exits the device.
This MOSFET is designed for high efficiency and has low on-resistance, making it suitable for power management applications, including DC-DC converters and motor drives. Its specifications typically include a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 50A, depending on the thermal conditions.
Manufacturer
Application
1. DC-DC Converters: Efficient switching in buck and boost converters.
2. Power Supply Units (PSUs): Used in high-efficiency power supplies for various electronics.
3. Motor Control: Suitable for driving motors in industrial and automotive applications.
4. Switching Regulators: Functions as a high-speed switch in linear and switching regulators.
5. LED Drivers: Controls current in LED lighting systems.
6. Class D Amplifiers: Enhances efficiency in audio amplifiers.
Its high voltage and current ratings make it ideal for applications requiring robust power handling.