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IPD50P03P4L-11
+BOMMOSFET P-CH 30V 50A DPAK
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제조업체UMW 회사
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제조업체 부품 #IPD50P03P4L-11
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데이터시트 IPD50P03P4L-11 DataSheet
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재고11289
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사양
| 속성 | 가치 |
| Part Status | Active |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
개요
Description
Key features of the IPD50P03P4L-11 include its 30V maximum drain-source voltage, low RDS(on) value, and high current handling capacity. It is packaged in a standard form factor that facilitates easy integration into circuit designs. The MOSFET's design allows it to operate effectively at high frequencies, making it suitable for modern electronic systems requiring fast switching speeds.
Overall, the IPD50P03P4L-11 is valued in electronic design for its robust performance, energy efficiency, and reliability, contributing to enhanced system efficiency and longevity in a broad range of applications.
Equivalent
1. IRF4905 - P-channel MOSFET by Infineon
2. FQP27P06 - P-channel MOSFET by ON Semiconductor
3. SI7463DP - P-channel MOSFET by Vishay
4. SQJ407EP - P-channel MOSFET by Vishay
When considering an equivalent, verify key specifications like voltage, current, and RDS(on) to ensure compatibility.
Features
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) and continuous drain current that suit medium power applications.
2. Low On-Resistance: The device offers low R_DS(on), reducing power loss and improving efficiency.
3. Fast Switching: It features fast switching speeds, which contribute to better performance in high-frequency applications.
4. Thermal Management: The MOSFET is designed to handle thermal stress effectively, often featuring a low thermal resistance package.
5. Robust Design: It includes protection mechanisms against over-voltage and over-current conditions.
6. Compact Package: The device typically comes in a space-saving package, suitable for compact PCB designs.
7. Applications: Common applications include DC-DC converters, motor drivers, and other power management systems.
8. Safe Operating Area: The design ensures a wide safe operating area for enhanced reliability.
These features make the IPD50P03P4L-11 a versatile choice for efficient power management in various electronic devices.
Pinout
1. Gate (G): The gate terminal controls the MOSFET's conduction state. By applying a voltage to the gate, you can turn the MOSFET on or off, effectively controlling the flow of current between the drain and source.
2. Drain (D): The drain is one of the MOSFET's main current-carrying terminals. It is typically connected to the load in a circuit.
3. Source (S): The source is the other primary current-carrying terminal, usually connected to the ground or the negative side of the power supply in most applications.
This MOSFET is used in various applications involving switching and amplification due to its efficiency and ability to handle high power levels. Always refer to the datasheet for specific electrical characteristics and maximum ratings.
Manufacturer
Application
1. Automotive Systems: Used in powertrain controls, electric power steering, and battery management systems.
2. DC-DC Converters: Ideal for voltage regulation and power conversion in consumer electronics.
3. Motor Drives: Employed in controlling and driving motors in industrial and home appliance applications.
4. Renewable Energy Systems: Utilized in solar inverters and other energy conversion systems.
5. Switching Power Supplies: Essential in computer and telecommunications equipment for efficient power management.
These applications leverage the MOSFET's low on-state resistance and high-frequency switching capabilities.