IPD65R600C6

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IPD65R600C6

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  • 데이터시트 IPD65R600C6 DataSheet

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사양

속성 가치
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity 2500
Technology Si
Shipping Restrictions Mouser does not presently sell this product in your region.
REACH - SVHC Details
Mounting Type SMD/SMT
Package / Case DPAK-3 (TO-252-3)
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain - Source Breakdown Voltage 650 V
Id - Continuous Drain Current 7.3 A
Rds On 540 mOhms
Vgs - Gate - Source Voltage - 20 V, + 20 V
Vgs th - Gate - Source Threshold Voltage 3.5 V
Qg - Gate Charge 23 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 63 W
Channel Mode Enhancement
Tradename CoolMOS
Configuration Single
Fall Time 13 ns
Height 2.3 mm
Length 6.5 mm
Rise Time 9 ns
Series CoolMOS C6
Transistor Type 1 N-Channel
Typical Turn - Off Delay Time 80 ns
Typical Turn - On Delay Time 12 ns
Width 6.22 mm
Part # Aliases IPD65R6C6XT SP000745020 IPD65R600C6BTMA1
Unit Weight 0.011640 oz

개요

Description

The IPD65R600C6 is a high-performance N-channel MOSFET designed for various power applications, including industrial and automotive systems. With a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 65A, it is suitable for high-voltage operations. The device features low on-resistance (R_DS(on)), typically around 0.16 ohms, which enhances efficiency by reducing conduction losses.
This MOSFET incorporates advanced technological designs, including a planar layout that improves thermal performance and reliability. It is commonly used in switching power supplies, motor drives, and inverters, making it a versatile component in power electronics.
The IPD65R600C6 is also characterized by fast switching speeds, enabling better performance in high-frequency applications. It is housed in a TO-247 package, which allows for efficient heat dissipation. Overall, the IPD65R600C6 is an ideal choice for engineers seeking robust and efficient solutions in power management applications.

Equivalent

The IPD65R600C6 is an N-channel MOSFET with a 600V rating and a 65A continuous drain current. Equivalent parts include the IRF840, STP65NF600, and FGD2N60. However, always check the specifications for gate threshold voltage, RDS(on), and package type to ensure compatibility in your application.

Features

The IPD65R600C6 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It can withstand a maximum drain-source voltage (V_DS) of 600V.
2. Current Rating: It supports a continuous drain current (I_D) of up to 65A, making it suitable for high-power applications.
3. RDS(on): The on-resistance is very low, typically around 0.65 ohms, which minimizes conduction losses.
4. Gate Threshold Voltage: The V_GS(th) is in the range of 2-4V, allowing for easier control by low-voltage gate drivers.
5. Package Type: It comes in a TO-247 package, facilitating good thermal management.
6. Fast Switching: Designed for high-speed switching applications, it helps reduce switching losses.
7. Applications: Ideal for use in power supplies, motor drives, and other high-voltage circuits.
These characteristics make the IPD65R600C6 suitable for various industrial and automotive applications where performance and efficiency are critical.

Pinout

The IPD65R600C6 is an N-channel MOSFET manufactured by Infineon Technologies. It features a total of 5 pins. The pin functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to this pin turns the device on or off.
2. Drain (D) - The drain pin is where the current flows out of the MOSFET when it is turned on.
3. Source (S) - The source pin is where the current enters the MOSFET.
4. Body Diode (internal) - The device includes an intrinsic body diode between the drain and source, allowing current to flow in the reverse direction when necessary.
5. Tab (or heatsink) - This is typically connected to the source and is used for heat dissipation.
The device is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current of up to 65A.

Manufacturer

The IPD65R600C6 is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon, headquartered in Neubiberg, Germany, operates within the semiconductor industry, focusing on products that serve various sectors, including automotive, industrial power control, and security. The company is particularly recognized for its innovation in power management and efficiency solutions, including MOSFETs and IGBTs, which are crucial for energy management applications. The IPD65R600C6 is a high-performance MOSFET designed for power applications, offering low on-resistance and high efficiency, making it suitable for use in energy-efficient designs like power converters and motor drives. Infineon is committed to sustainability and advancing technology for a better and sustainable future.

Application

The IPD65R600C6 is an N-channel MOSFET primarily used in power electronics applications. Its key areas include:
1. Switching Power Supplies: For efficient power conversion in AC-DC and DC-DC applications.
2. Motor Drives: Used in inverter circuits for driving electric motors in industrial and automotive sectors.
3. Power Management: Employed in battery management systems and energy storage applications.
4. Lighting: Suitable for LED drivers and dimming applications.
5. Audio Amplifiers: Utilized in Class D amplifiers for high efficiency.
Its low on-resistance and high voltage ratings make it ideal for these applications, providing improved efficiency and thermal performance.

Package

The IPD65R600C6 is packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient thermal management and robust performance in power electronics.

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