IPG20N04S4-12

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IPG20N04S4-12

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  • 제조업체 부품 #IPG20N04S4-12

  • 데이터시트 IPG20N04S4-12 DataSheet

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사양

속성 가치
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity 5000
Technology Si
REACH - SVHC Details
Mounting Type SMD/SMT
Package / Case TDSON-8
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain - Source Breakdown Voltage 40 V
Id - Continuous Drain Current 20 A
Rds On 12.2 mOhms
Vgs - Gate - Source Voltage - 20 V, + 20 V
Vgs th - Gate - Source Threshold Voltage 3 V
Qg - Gate Charge 18 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 41 W
Channel Mode Enhancement
Tradename OptiMOS
Configuration Dual
Height 1.27 mm
Length 5.9 mm
Series OptiMOS-T2
Transistor Type 2 N-Channel
Width 5.15 mm
Part # Aliases IPG2N4S412XT SP000705560 IPG20N04S412ATMA1
Unit Weight 0.003474 oz
Qualification AEC-Q100

개요

Description

The IPG20N04S4-12 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for power electronics applications, particularly in inverter and converter circuits. It belongs to the 4th generation of IGBTs, featuring a voltage rating of 400V and a current rating of 20A.
Key characteristics include low conduction and switching losses, making it suitable for high-efficiency applications. The device also offers fast switching capabilities, which enhance overall system performance. Its robust design allows for reliable operation in demanding thermal and electrical conditions.
The IPG20N04S4-12 is commonly used in automotive, industrial, and renewable energy applications, such as motor drives and photovoltaic inverters. The device's compact package ensures ease of integration into various circuit designs. In summary, the IPG20N04S4-12 is a versatile IGBT ideal for applications requiring efficiency and reliability in power conversion.

Equivalent

The IPG20N04S4-12 is an N-channel MOSFET from Infineon. Equivalent products include the STP20N04L, FQP20N04L, and the IRF3205. Ensure compatibility by checking specifications like voltage, current rating, RDS(on), and package type before substituting.

Features

The IPG20N04S4-12 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 400V, suitable for various power applications.
2. Current Rating: The maximum continuous drain current (I_D) is 20A, providing robust performance.
3. R_DS(on): It boasts a low on-resistance of approximately 0.04Ω, which contributes to reduced conduction losses and improved efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring effective switching.
5. Package Type: The device is available in a TO-220 package, allowing for easy heat dissipation.
6. Applications: Ideal for use in power supplies, motor drives, and other high-voltage switching applications.
Overall, the IPG20N04S4-12 combines high performance with reliability, making it suitable for demanding electronic designs.

Pinout

The IPG20N04S4-12 is an N-channel MOSFET, designed for power applications. It typically comes in a TO-220 package, which features a pin count of three.
Pin Functions:
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied to the gate turns the device on, allowing current to flow between the drain and source.
2. Drain (D): This pin is where the load is connected. When the MOSFET is turned on, the drain allows current to flow through to the source.
3. Source (S): This pin is connected to the ground or negative side of the load. It allows the current to exit the MOSFET.
The IPG20N04S4-12 is widely used in applications requiring high efficiency and fast switching speeds, such as in power supplies, motor drives, and converters.

Manufacturer

The IPG20N04S4-12 is manufactured by Infineon Technologies, a prominent global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in designing, manufacturing, and marketing semiconductor and system solutions for automotive, industrial, and multimarket applications. The company is recognized for its expertise in power semiconductor technologies, including MOSFETs, IGBTs, and other devices used in power management and conversion.
Infineon operates across various sectors, including automotive electronics, industrial power control, security technologies, and IoT solutions. The IPG20N04S4-12 is a specific type of N-channel MOSFET designed for high-performance applications, such as power converters and motor control systems. Infineon's focus on innovation and sustainability positions it as a key player in the semiconductor industry, contributing to advancements in energy efficiency and smart technologies.

Application

The IPG20N04S4-12 is an IGBT (Insulated Gate Bipolar Transistor) suitable for various application areas, primarily in power electronics. Its key applications include:
1. Industrial drives - Used in motor control for efficient power conversion.
2. Power supplies - Employed in switch-mode power supplies and converters.
3. Renewable energy systems - Utilized in inverters for solar and wind power systems.
4. Electric vehicles - Implementation in traction and power management systems.
5. HVAC systems - Used for efficient control in heating, ventilation, and air conditioning.
These applications benefit from the device's high voltage and current handling capabilities, as well as its fast switching performance.

Package

The IPG20N04S4-12 is typically available in a TO-220 package type. This package is known for its good thermal performance and is commonly used for power applications in electronic circuits.

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