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IPP030N10N5
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제조업체인피니티 테크놀로지
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제조업체 부품 #IPP030N10N5
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데이터시트 IPP030N10N5 DataSheet
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사양
| 속성 | 가치 |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Technology | Si |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Height | 15.65 mm |
| Length | 10 mm |
| Width | 4.4 mm |
| Unit Weight | 0.068784 oz |
개요
Description
This MOSFET is characterized by a low on-resistance (R_DS(on)), which minimizes power loss during operation, enhancing overall efficiency. Its fast switching capability allows for improved performance in high-frequency applications.
The device is housed in a TO-220 package, which aids in effective heat dissipation, making it suitable for high-power applications. Its robust construction ensures reliability in challenging environments.
Overall, the IPP030N10N5 is an excellent choice for engineers seeking a reliable and efficient solution for power management in electronic circuits.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It supports a continuous drain current (I_D) of up to 30A, allowing for robust performance in demanding environments.
3. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 30 mΩ, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 2V to 4V, enabling efficient switching in low-voltage control circuits.
5. Thermal Resistance: It features a low thermal resistance junction-to-case (RθJC), promoting effective heat dissipation.
6. Package: Packaged in a TO-220 format, it allows for easy heat sinking and integration into various designs.
These features make the IPP030N10N5 ideal for applications like DC-DC converters, motor drives, and power management systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows the transistor to conduct between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows into the MOSFET when it is on.
3. Source (S): This pin is the terminal through which current exits the MOSFET when it is conducting.
The IPP030N10N5 is designed for high efficiency and low on-resistance applications, commonly used in power management and switching applications. It can handle a maximum drain-source voltage of 100V and has a low on-resistance, making it suitable for various electronic circuits.