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IPP200N25N3G
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제조업체인피니티 테크놀로지
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제조업체 부품 #IPP200N25N3G
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사양
| 속성 | 가치 |
| EU Ro HS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Unconfirmed |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Configuration | Single |
| Process Technology | OptiMOS 3 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 250 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 64 |
| Maximum Drain Source Resistance (M Ohm) | 20@10V |
| Typical Gate Charge @ Vgs (n C) | 64@10V |
| Typical Gate Charge @ 10 V (n C) | 64 |
| Typical Input Capacitance @ Vds (p F) | 5340@100V |
| Maximum Power Dissipation (m W) | 300000 |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 20 |
| Typical Turn - Off Delay Time (ns) | 45 |
| Typical Turn - On Delay Time (ns) | 18 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tube |
| Mounting Type | Through Hole |
| Package Height | 9.45(Max) |
| Package Width | 4.57(Max) |
| Package Length | 10.36(Max) |
| PCB changed | 3 |
| Package / Case | TO |
| Supplier Device Package | TO-220 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
| Maximum Gate Threshold Voltage (V) | 4 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Tab | Tab |
개요
Description
The IPP200N25N3G is an N-channel power MOSFET designed for high-efficiency applications in power electronics. It features a maximum drain-source voltage (V_DS) of 250V and a continuous drain current (I_D) rating of 200A, making it suitable for high-voltage and high-current scenarios. With a low on-resistance, this MOSFET enables reduced power losses during operation, contributing to enhanced thermal performance and overall efficiency.
The device is constructed using advanced semiconductor technology, allowing for fast switching capabilities, which is crucial in applications such as DC-DC converters, motor drives, and power inverters. Its robust design ensures reliability in demanding environments. The IPP200N25N3G typically comes in a TO-220 package, facilitating easy heat dissipation, and is ideal for applications requiring compact yet powerful solutions. This MOSFET is widely used in industrial, automotive, and renewable energy systems, where efficiency and reliability are paramount.
The device is constructed using advanced semiconductor technology, allowing for fast switching capabilities, which is crucial in applications such as DC-DC converters, motor drives, and power inverters. Its robust design ensures reliability in demanding environments. The IPP200N25N3G typically comes in a TO-220 package, facilitating easy heat dissipation, and is ideal for applications requiring compact yet powerful solutions. This MOSFET is widely used in industrial, automotive, and renewable energy systems, where efficiency and reliability are paramount.
Equivalent
The IPP200N25N3G is a power MOSFET with a 250V, 200A rating. Equivalent products include the STP200N25, IXFH200N25, and FDB200N25. It's crucial to verify specifications such as R_DS(on), gate charge, and thermal characteristics to ensure compatibility in your specific application. Always refer to the manufacturer's datasheets for precise comparisons.
Features
The IPP200N25N3G is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 250V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (Id) of 200A, allowing for substantial load handling.
3. RDS(on): Low on-resistance (RDS(on)) typically around 30 mΩ, which minimizes conduction losses and improves efficiency.
4. Gate-Source Voltage: It can operate with a maximum gate-source voltage (Vgs) of ±20V.
5. Package Type: Available in a TO-247 package, facilitating effective heat dissipation.
6. Fast Switching: Optimized for fast switching applications, beneficial for power conversion and motor control.
7. Thermal Resistance: Low thermal resistance, enhancing thermal management in high-power applications.
Overall, the IPP200N25N3G is ideal for power supplies, converters, and industrial applications requiring robust performance and efficiency.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 250V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (Id) of 200A, allowing for substantial load handling.
3. RDS(on): Low on-resistance (RDS(on)) typically around 30 mΩ, which minimizes conduction losses and improves efficiency.
4. Gate-Source Voltage: It can operate with a maximum gate-source voltage (Vgs) of ±20V.
5. Package Type: Available in a TO-247 package, facilitating effective heat dissipation.
6. Fast Switching: Optimized for fast switching applications, beneficial for power conversion and motor control.
7. Thermal Resistance: Low thermal resistance, enhancing thermal management in high-power applications.
Overall, the IPP200N25N3G is ideal for power supplies, converters, and industrial applications requiring robust performance and efficiency.
Pinout
The IPP200N25N3G is an N-channel MOSFET transistor designed for power applications. It typically features a TO-220 package with a pin count of three. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is turned on. It connects to the load.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It is the terminal through which current enters the MOSFET when it is conducting.
The IPP200N25N3G is characterized by its high voltage rating (up to 250V) and high current capability (200A), making it suitable for various applications, including power supplies and motor drives.
1. Gate (G): This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is turned on. It connects to the load.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It is the terminal through which current enters the MOSFET when it is conducting.
The IPP200N25N3G is characterized by its high voltage rating (up to 250V) and high current capability (200A), making it suitable for various applications, including power supplies and motor drives.
Manufacturer
The IPP200N25N3G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in the development and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company primarily serves various sectors such as automotive, industrial, and consumer electronics. Infineon's products are designed to enhance energy efficiency, improve performance, and enable advanced functionalities in electronic systems. The IPP200N25N3G, specifically, is a power MOSFET used in applications that require efficient power management and conversion.
Application
The IPP200N25N3G is a high-voltage N-channel IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as:
1. Industrial Motor Drives - For efficient control of electric motors in manufacturing.
2. Power Inverters - Utilized in renewable energy systems like solar inverters and wind energy converters.
3. Electric Vehicles - In power conversion systems for traction and auxiliary drives.
4. Welding Equipment - For controlling high currents in arc welding applications.
5. Switching Power Supplies - In high-efficiency power conversion for various electronic devices.
Its high voltage and current ratings make it suitable for demanding power applications.
1. Industrial Motor Drives - For efficient control of electric motors in manufacturing.
2. Power Inverters - Utilized in renewable energy systems like solar inverters and wind energy converters.
3. Electric Vehicles - In power conversion systems for traction and auxiliary drives.
4. Welding Equipment - For controlling high currents in arc welding applications.
5. Switching Power Supplies - In high-efficiency power conversion for various electronic devices.
Its high voltage and current ratings make it suitable for demanding power applications.
Package
The IPP200N25N3G is packaged in a DPAK (TO-252) format, which is a surface-mount device package. This type of packaging facilitates efficient heat dissipation and is suitable for various electronic applications.
