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IPP65R190C7
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제조업체인피니티 테크놀로지
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제조업체 부품 #IPP65R190C7
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데이터시트 IPP65R190C7 DataSheet
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사양
| 속성 | 가치 |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 500 |
| Technology | Si |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 13 A |
| Rds On | 168 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 23 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 72 W |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Configuration | Single |
| Fall Time | 9 ns |
| Height | 15.65 mm |
| Length | 10 mm |
| Rise Time | 11 ns |
| Series | CoolMOS C7 |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 54 ns |
| Typical Turn - On Delay Time | 11 ns |
| Width | 4.4 mm |
| Part # Aliases | SP000929426 IPP65R190C7FKSA1 |
| Unit Weight | 0.068784 oz |
개요
Description
The IPP65R190C7 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon. This device is designed for high-performance applications, particularly in power management and conversion systems. With a voltage rating of 650V and a continuous drain current of 190A, it is suitable for use in industrial and automotive applications, such as power supplies, motor drives, and renewable energy systems.
Key features include low on-resistance (RDS(on)), fast switching speeds, and a rugged design that improves reliability and efficiency in power circuits. The C7 designation indicates that it belongs to the latest generation of Infineon's CoolMOS technology, which enhances efficiency and thermal performance.
Overall, the IPP65R190C7 is ideal for high-efficiency applications requiring robust components capable of handling significant power loads while minimizing energy loss.
Key features include low on-resistance (RDS(on)), fast switching speeds, and a rugged design that improves reliability and efficiency in power circuits. The C7 designation indicates that it belongs to the latest generation of Infineon's CoolMOS technology, which enhances efficiency and thermal performance.
Overall, the IPP65R190C7 is ideal for high-efficiency applications requiring robust components capable of handling significant power loads while minimizing energy loss.
Equivalent
The IPP65R190C7 is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FQP75N06. Always verify specifications such as voltage, current ratings, and on-resistance to ensure compatibility for your specific application.
Features
The IPP65R190C7 is a high-performance N-channel MOSFET designed for power applications. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 190A, offering robust performance in demanding environments.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.190 ohms, which enhances efficiency by reducing power losses.
4. Gate Charge (Q_g): The total gate charge is around 100nC, allowing for fast switching speeds and reduced drive power requirements.
5. Package: Typically available in a TO-220 package, it allows for effective thermal dissipation.
6. Applications: Ideal for use in switch-mode power supplies, motor drives, and industrial equipment due to its reliability and efficiency.
Overall, the IPP65R190C7 is an excellent choice for applications requiring high efficiency and robust performance in power electronics.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 190A, offering robust performance in demanding environments.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.190 ohms, which enhances efficiency by reducing power losses.
4. Gate Charge (Q_g): The total gate charge is around 100nC, allowing for fast switching speeds and reduced drive power requirements.
5. Package: Typically available in a TO-220 package, it allows for effective thermal dissipation.
6. Applications: Ideal for use in switch-mode power supplies, motor drives, and industrial equipment due to its reliability and efficiency.
Overall, the IPP65R190C7 is an excellent choice for applications requiring high efficiency and robust performance in power electronics.
Pinout
The IPP65R190C7 is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load and carries the current when the MOSFET is in the on state.
3. Source (S): This pin is connected to ground or the lower potential side of the circuit and is the terminal through which the current exits the MOSFET.
The IPP65R190C7 is designed for high-speed switching and can handle high current and voltage. Its applications include power management, motor control, and other electronic circuits requiring efficient switching capabilities.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load and carries the current when the MOSFET is in the on state.
3. Source (S): This pin is connected to ground or the lower potential side of the circuit and is the terminal through which the current exits the MOSFET.
The IPP65R190C7 is designed for high-speed switching and can handle high current and voltage. Its applications include power management, motor control, and other electronic circuits requiring efficient switching capabilities.
Manufacturer
The IPP65R190C7 is manufactured by Infineon Technologies, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in designing and producing a wide range of semiconductor and system solutions, with a focus on automotive, industrial, and multimarket sectors. The company is recognized for its expertise in power semiconductors, including MOSFETs, IGBTs, and other components essential for energy efficiency and power management applications. Infineon plays a significant role in enabling advancements in areas such as electric mobility, renewable energy, and the Internet of Things (IoT).
Application
The IPP65R190C7 is a high-performance N-channel MOSFET primarily used in power management applications. Key application areas include:
1. Switching Power Supplies: For efficient power conversion in various electronic devices.
2. DC-DC Converters: Used in battery-operated devices and renewable energy systems.
3. Motor Control: Employed in driving motors for robotics and electric vehicles.
4. High-Frequency Applications: Suitable for RF amplifiers and signal processing.
5. Power Amplifiers: Utilized in audio and RF applications for enhanced performance.
Its low on-resistance and high current capability make it ideal for these applications.
1. Switching Power Supplies: For efficient power conversion in various electronic devices.
2. DC-DC Converters: Used in battery-operated devices and renewable energy systems.
3. Motor Control: Employed in driving motors for robotics and electric vehicles.
4. High-Frequency Applications: Suitable for RF amplifiers and signal processing.
5. Power Amplifiers: Utilized in audio and RF applications for enhanced performance.
Its low on-resistance and high current capability make it ideal for these applications.
Package
The IPP65R190C7 is packaged in a TO-247 package type, which is a power package designed for high-power applications, providing better heat dissipation and robust performance.
