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IR2301STRPBF
+BOMIC GATE DRVR HI/LOW SIDE 8SOIC
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제조업체인피니티 테크놀로지
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제조업체 부품 #IR2301STRPBF
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데이터시트 IR2301STRPBF DataSheet
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패키지 SOIC-8
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재고6145
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Driven Configuration | High-Side or Low-Side |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 5V ~ 20V |
| Logic Voltage - VILVIH | 0.8V, 2.9V |
| Current - Peak Output(Source Sink) | 200mA, 350mA |
| Input Type | Non-Inverting |
| High Side Voltage - Max(Bootstrap) | 600 V |
| Rise / Fall Time(Typ) | 130ns, 50ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
개요
Description
The IR2301STRPBF features a compact design, making it suitable for space-constrained applications. It is designed to handle high current and voltage levels, making it ideal for use in high-performance systems. The part is lead-free, denoted by the "PBF" (Pb-Free) in its name, aligning with global environmental regulations.
Overall, the IR2301STRPBF offers reliability and efficient power control, making it a popular choice for engineers working on various electronic projects requiring robust power handling capabilities.
Equivalent
1. IR2101 from Infineon Technologies
2. IRS2101 from Infineon Technologies
3. FAN7392 from ON Semiconductor
4. L6387 from STMicroelectronics
5. UCC27201 from Texas Instruments
These alternatives generally provide similar functionality but may have differences in specifications or features. Always check the datasheets for compatibility with your specific application requirements.
Features
1. Half-Bridge Driver Configuration: It is designed to drive N-channel MOSFETs and IGBTs in a half-bridge configuration.
2. High-Side and Low-Side Output: The device provides both high-side and low-side referenced output channels.
3. Floating Channel: Capable of operating up to 600 V for the high-side output.
4. Shoot-Through Protection: Incorporates a built-in dead-time to prevent shoot-through, enhancing reliability.
5. Under-Voltage Lockout: Both high-side and low-side drivers have undervoltage lockout protection to prevent malfunctioning under low voltage conditions.
6. CMOS Schmitt Triggered Inputs: Ensures noise immunity on all inputs for robust operation.
7. Bootstrap Circuitry: Simplifies design by allowing the use of a bootstrap capacitor for the high-side driver.
8. Compact Package: Available in a compact SOIC-8 package, optimizing space in circuit designs.
These features make it suitable for various inverter and motor drive applications.
Pinout
The IR2301STRPBF comes in an 8-pin package. Here is a brief overview of its pin functions:
1. VCC (Pin 1): Supply voltage for the lower gate driver.
2. HIN (Pin 2): Logic input for the high-side gate driver.
3. LIN (Pin 3): Logic input for the low-side gate driver.
4. COM (Pin 4): Common ground reference for the low-side driver.
5. LO (Pin 5): Output for the low-side gate driver.
6. VS (Pin 6): High-side floating supply return (connected to the source of the high-side MOSFET).
7. HO (Pin 7): Output for the high-side gate driver.
8. VB (Pin 8): High-side floating supply voltage.
These pin functions allow the IR2301STRPBF to effectively drive high-side and low-side power transistors in a half-bridge configuration.
Manufacturer
Infineon's products are integral in various applications such as automotive electronics, consumer electronics, industrial automation, and smart home technologies. The IR2301STRPBF is a part of their power semiconductor product line, which focuses on enhancing energy efficiency and enabling connectivity in electronic systems. As a prominent player in the semiconductor industry, Infineon emphasizes innovation and sustainability, aiming to provide solutions that contribute to energy savings and environmental protection.