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IRF100B201
+BOMMOSFET N-CH 100V 192A TO220AB
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRF100B201
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데이터시트 IRF100B201 DataSheet
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패키지 TO-220
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사양
| 속성 | 가치 |
| Package / Case | Bulk,Tube |
| Series | HEXFET®, StrongIRFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 192A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 4.2mOhm @ 115A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 255 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 9500 pF @ 50 V |
| Power Dissipation (Max) | 441W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
개요
Description
Equivalent
Features
1. Voltage and Current Ratings: It typically supports high voltage and current levels, making it suitable for high-power applications.
2. RDS(on): It has a low on-state resistance, which reduces power loss and increases efficiency during operation.
3. Gate Charge: The MOSFET features a relatively low gate charge, enabling efficient switching with minimal drive power required.
4. Thermal Performance: It is designed to handle high thermal loads, often featuring a robust package that aids in heat dissipation.
5. Fast Switching: Suitable for high-frequency applications due to its fast switching capability, which reduces switching losses.
6. Robust Design: It typically incorporates avalanche energy rating and dv/dt ruggedness, which improves reliability in harsh conditions.
7. Package Type: Available in various package types that affect its thermal and electrical performance, and suitability for different applications.
These features make the IRF100B201 suitable for applications in power supply units, motor drives, and other high-power electronic devices.
Pinout
1. Gate (G): This pin is used to trigger the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the main current enters the MOSFET when it is in the "on" state.
3. Source (S): The current exits the MOSFET through this pin when it is conducting.
The IRF100B201 is designed for high-power applications, offering high efficiency and switching speed, suitable for use in power supply circuits, motor controllers, or other high-current applications. Always refer to the specific datasheet for detailed specifications and application guidelines.
Manufacturer
Application
1. Switching Power Supplies: Used in converters and power supply units for improved efficiency and thermal performance.
2. Motor Control: Suitable for driving motors in industrial and automotive applications due to its high current and voltage handling capabilities.
3. Battery Management: Used in battery protection circuits to manage charging and discharging cycles.
4. Renewable Energy Systems: Employed in solar inverters and wind turbine systems for energy conversion and management.
5. Uninterruptible Power Supplies (UPS): Ensures efficient power delivery and management in UPS systems.
These applications benefit from the IRF100B201's low on-resistance and fast switching capabilities.