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IRF135B203
+BOMMOSFET N-CH 135V 129A TO220-3
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRF135B203
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데이터시트 IRF135B203 DataSheet
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사양
| 속성 | 가치 |
| Series | StrongIRFET™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 135 V |
| Current - Continuous Drain (Id) @ 25°C | 129A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 77A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9700 pF @ 50 V |
| Power Dissipation (Max) | 441W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | IRF135 |
개요
Description
Key specifications include a low Rds(on) (drain-source on resistance), which enhances efficiency by reducing power losses. The IRF135B203 also has a fast switching speed, enabling it to handle rapid changes in voltage and current, which is crucial for applications like pulse-width modulation (PWM) in power supplies.
With a TO-220 package, it offers good thermal performance and ease of heat dissipation. Overall, the IRF135B203 is a reliable choice for designers seeking effective power switching solutions in various electronic circuits.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for medium voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 15A, providing robust performance in various applications.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) typically around 0.045 ohms, ensuring efficient operation and minimal power loss during conduction.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2V to 4V, allowing for easy drive with low-voltage logic levels.
5. Package Type: Available in TO-220 and DPAK packages, facilitating ease of installation and heat dissipation.
6. Fast Switching Speed: Designed for quick switching, it is ideal for applications such as power management, DC-DC converters, and motor control.
Overall, the IRF135B203 is a versatile MOSFET suitable for various electronic applications requiring reliable performance.
Pinout
1. Gate (G): Controls the MOSFET's operational state (on/off).
2. Drain (D): The terminal through which the main current flows when the MOSFET is on.
3. Source (S): The terminal connected to the ground or return path in a circuit.
The IRF135B203 is designed for applications in switching and amplification, featuring a high voltage rating and low on-resistance. It is commonly used in power management, motor control, and other high-frequency applications. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Manufacturer
Infineon plays a significant role in enabling energy efficiency and sustainable solutions in the electronics industry. Its products are widely used in applications ranging from power supplies and electric vehicles to renewable energy systems and smart grids. The company is committed to innovation and quality, investing heavily in research and development to maintain a competitive edge in the rapidly evolving semiconductor market. With a global presence, Infineon serves customers in diverse sectors, providing essential components that enhance performance and reliability in electronic systems.
Application
1. Switching Power Supplies: For efficient power conversion in DC-DC converters.
2. Motor Control: Used in motor drivers for controlling speed and direction in various electric motors.
3. LED Drivers: For regulating current in LED lighting applications.
4. Audio Amplifiers: Employed in Class D amplifiers for improved efficiency.
5. Overcurrent Protection Circuits: Used in circuit protection designs to manage load conditions.
These applications benefit from the MOSFET's high efficiency, fast switching speed, and thermal performance.