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IRF150P221AKMA1
+BOMMOSFET N-CH 150V 186A TO247-3
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRF150P221AKMA1
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사양
| 속성 | 가치 |
| Series | StrongIRFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 186A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4.6V @ 264µA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 75 V |
| Power Dissipation (Max) | 3.8W (Ta), 341W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
개요
Description
The IRF150P221AKMA1 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It is characterized by its ability to handle high voltage and current levels, making it suitable for various electronic circuits, including switching power supplies, motor drivers, and other high-power applications.
Key specifications include a maximum drain-source voltage (V_DS) of 150V, a continuous drain current (I_D) of up to 22A, and a low on-resistance (R_DS(on)), which minimizes power loss during operation. The device typically features a gate threshold voltage (V_GS(th)) that allows it to switch on efficiently with low gate voltage.
The IRF150P221AKMA1 is commonly used in automotive, industrial, and consumer electronics due to its reliability and performance. Its compact package design aids in space-saving circuit layouts while ensuring robust thermal management. Overall, it is a versatile component for designing efficient, high-performance electronic systems.
Key specifications include a maximum drain-source voltage (V_DS) of 150V, a continuous drain current (I_D) of up to 22A, and a low on-resistance (R_DS(on)), which minimizes power loss during operation. The device typically features a gate threshold voltage (V_GS(th)) that allows it to switch on efficiently with low gate voltage.
The IRF150P221AKMA1 is commonly used in automotive, industrial, and consumer electronics due to its reliability and performance. Its compact package design aids in space-saving circuit layouts while ensuring robust thermal management. Overall, it is a versatile component for designing efficient, high-performance electronic systems.
Equivalent
The IRF150P221AKMA1 is a power MOSFET. Equivalent products include the IRF150, IRF240, and IRF320. Other compatible alternatives might be the STP14NM50, STP16NF06, and FQP50N06. Always verify specifications such as voltage, current, and package type to ensure compatibility for your application.
Features
The IRF150P221AKMA1 is a N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 220V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle up to 15A of continuous current, providing robust performance in demanding conditions.
3. R_DS(on): The on-resistance is low (typically around 0.5 ohms), which reduces power loss and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2-4V, allowing for effective low-voltage driving.
5. Package Type: It is available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching Speed: The MOSFET is designed for quick switching, making it ideal for applications like power supplies, motor drivers, and inverters.
7. Thermal Resistance: It features low thermal resistance, enhancing its reliability under thermal stress.
These attributes make the IRF150P221AKMA1 suitable for a variety of electronic and power management applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 220V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle up to 15A of continuous current, providing robust performance in demanding conditions.
3. R_DS(on): The on-resistance is low (typically around 0.5 ohms), which reduces power loss and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2-4V, allowing for effective low-voltage driving.
5. Package Type: It is available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching Speed: The MOSFET is designed for quick switching, making it ideal for applications like power supplies, motor drivers, and inverters.
7. Thermal Resistance: It features low thermal resistance, enhancing its reliability under thermal stress.
These attributes make the IRF150P221AKMA1 suitable for a variety of electronic and power management applications.
Pinout
The IRF150P221AKMA1 is a N-channel MOSFET with a total of 3 pins.
Pin Configuration and Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): This is the pin where the load connects. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin serves as the return path for the current. It connects to ground or the negative terminal of the power supply in typical circuit configurations.
The IRF150P221AKMA1 is commonly used in applications such as power management, switching, and amplification due to its high efficiency and fast switching capabilities.
Pin Configuration and Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): This is the pin where the load connects. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin serves as the return path for the current. It connects to ground or the negative terminal of the power supply in typical circuit configurations.
The IRF150P221AKMA1 is commonly used in applications such as power management, switching, and amplification due to its high efficiency and fast switching capabilities.
Manufacturer
The IRF150P221AKMA1 is manufactured by Infineon Technologies AG. Infineon is a leading global semiconductor manufacturer that specializes in producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and integrated circuits. The company focuses on various sectors, such as automotive, industrial, and consumer electronics, providing innovative technologies that enhance energy efficiency and enable smart connectivity. Infineon is renowned for its expertise in power management and automotive applications, making it a pivotal player in the semiconductor industry.
Application
The IRF150P221AKMA1 is an N-channel MOSFET primarily used in power management applications. Its key areas include:
1. Power Supply Circuits: Used in switching power supplies and converters for efficient voltage regulation.
2. Motor Control: Employed in driving DC motors and actuators in industrial and automotive applications.
3. H-Bridge Circuitry: Utilized in H-bridge configurations for controlling the direction and speed of motors.
4. LED Drivers: Suitable for controlling LED lighting systems.
5. Automation Systems: Implemented in relay and load control applications within automation and control systems.
Its high efficiency and thermal performance make it ideal for these applications.
1. Power Supply Circuits: Used in switching power supplies and converters for efficient voltage regulation.
2. Motor Control: Employed in driving DC motors and actuators in industrial and automotive applications.
3. H-Bridge Circuitry: Utilized in H-bridge configurations for controlling the direction and speed of motors.
4. LED Drivers: Suitable for controlling LED lighting systems.
5. Automation Systems: Implemented in relay and load control applications within automation and control systems.
Its high efficiency and thermal performance make it ideal for these applications.
Package
The IRF150P221AKMA1 is packaged in a TO-220 format. This type of package features a metal tab for heat dissipation and is commonly used for power devices, allowing for efficient thermal management in electronic applications.
