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IRF2804
+BOMMOSFET N-CH 40V 75A TO220AB
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRF2804
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데이터시트 IRF2804 DataSheet
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사양
| 속성 | 가치 |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 25 V |
| Power Dissipation (Max) | 330W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Packaging | Tube |
개요
Description
Equivalent
Features
- N-channel HEXFET power MOSFET
- Vds: 55 V
- Id (continuous): ≈ 32 A
- Rds(on): ≈ 0.04 Ω (typ) at Vgs = 10 V
- Gate threshold: ~2–4 V; not a logic-level device (drive at ~10 V for low Rds(on))
- Fast switching with low gate charge
- Avalanche-rated for inductive-load switching
- Package options: TO-220AB and D2PAK; Pb-free/RoHS compliant
- Wide operating temp: up to ~150 °C junction
- Applications: SMPS, DC-DC converters, motor control, switching regulators
Pinout
- Function: N‑channel enhancement‑mode power MOSFET used as a high‑current switching device in power supplies, motor drivers, etc. Pinout (front view, left to right): Gate, Drain, Source; tab = Drain.