이미지는 참조용입니다.
IRF620STRLPBF
+BOMMOSFET N-CH 200V 5.2A D2PAK
-
제조업체실리콘 닉스
-
제조업체 부품 #IRF620STRLPBF
-
재고3444
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 5.2A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 800mOhm @ 3.1A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 14 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 260 pF @ 25 V |
| Power Dissipation (Max) | 3W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
개요
Description
IRF620STRLPBF is a high‑voltage N‑channel power MOSFET from International Rectifier (now Infineon). It’s designed for switching and HV linear applications such as offline power supplies, isolated converters, and motor drives. Key specs (typical): Vds 600 V; Id about 5 A continuous. Rds(on) typically around 0.8–1.2 Ω at Vgs = 10 V (higher at lower gate drive) and rises with temperature. Gate threshold is ~2–4 V, but it requires about 10 V gate drive for full conduction, so it is not a logic‑level device. Package suffix STRLPBF indicates Pb‑free (RoHS) and tape‑and‑reel packaging. Always consult the vendor datasheet for exact electricals and thermal limits, and design around its SOA and heat sinking.
Equivalent
IRF620STRLPBF is a 200 V N-channel MOSFET in a TO-220 (STRLPBF) package. To give precise equivalents, confirm you want cross-references from major brands (Infineon, ST, Vishay, ON Semiconductor) with similar Id (~5 A) and Rds(on) (~1–2 Ω) at Vgs=10 V, and acceptable packaging. If yes, share your required packaging and Rds(on) tolerance and I’ll provide exact part numbers.
Features
IRF620STRLPBF is a high‑voltage N‑channel power MOSFET in a Pb‑free STRLPBF package. Key features:
- 600 V blocking voltage; N‑channel enhancement mode
- Drain current capability (with proper heatsinking) in the high‑single‑digit amp range
- Low RDS(on) for this voltage class (specified at VGS = 10 V) to reduce conduction losses
- Gate threshold typically 2–4 V; fully on around 10 V
- Fast switching suitable for PWM, SMPS, and motor drive applications
- Robust avalanche energy handling and intrinsic body diode for inductive loads
- Good dv/dt and di/dt performance; rugged device suitable for high‑voltage switching
- Pb‑free / RoHS compliant; packaged for tape & reel
Applications include switch‑mode power supplies, offline converters, DC‑DC converters, and motor control where a 600 V N‑channel MOSFET is appropriate.
- 600 V blocking voltage; N‑channel enhancement mode
- Drain current capability (with proper heatsinking) in the high‑single‑digit amp range
- Low RDS(on) for this voltage class (specified at VGS = 10 V) to reduce conduction losses
- Gate threshold typically 2–4 V; fully on around 10 V
- Fast switching suitable for PWM, SMPS, and motor drive applications
- Robust avalanche energy handling and intrinsic body diode for inductive loads
- Good dv/dt and di/dt performance; rugged device suitable for high‑voltage switching
- Pb‑free / RoHS compliant; packaged for tape & reel
Applications include switch‑mode power supplies, offline converters, DC‑DC converters, and motor control where a 600 V N‑channel MOSFET is appropriate.
Pinout
IRF620STRLPBF is a 3-pin N‑channel enhancement MOSFET (TO‑220 style). Pinout (looking at the front, pins downwards):
1. Gate — control input
2. Drain — main current input (also the metal tab/heatsink)
3. Source — main current output (returns to circuit)
Function: power switching and amplification (N‑channel MOSFET). The metal tab is electrically connected to the Drain.
1. Gate — control input
2. Drain — main current input (also the metal tab/heatsink)
3. Source — main current output (returns to circuit)
Function: power switching and amplification (N‑channel MOSFET). The metal tab is electrically connected to the Drain.
Manufacturer
- Manufacturer: Infineon Technologies AG (the IRF prefix originally came from International Rectifier; Infineon acquired it).
- What kind of company: A German multinational semiconductor company that designs and manufactures power semiconductors (MOSFETs, IGBTs, diodes), sensors, and security ICs for automotive, industrial, and consumer applications. It is one of the world’s leading semiconductor manufacturers.
- What kind of company: A German multinational semiconductor company that designs and manufactures power semiconductors (MOSFETs, IGBTs, diodes), sensors, and security ICs for automotive, industrial, and consumer applications. It is one of the world’s leading semiconductor manufacturers.
Application
IRF620STRLPBF is a high‑voltage N‑channel MOSFET (for switching power electronics). Typical application areas include:
- High‑voltage switching in SMPS and DC‑DC converters (buck/boost/flyback)
- Inverters and motor drives (BLDC, PMSM, induction) at medium voltage
- Solar/wind power electronics, UPS and energy‑storage power stages
- Industrial power supplies and control/chopper/load‑switching circuits
- Class‑D audio output stages and other high‑efficiency switching applications (where device ratings allow)
- High‑voltage switching in SMPS and DC‑DC converters (buck/boost/flyback)
- Inverters and motor drives (BLDC, PMSM, induction) at medium voltage
- Solar/wind power electronics, UPS and energy‑storage power stages
- Industrial power supplies and control/chopper/load‑switching circuits
- Class‑D audio output stages and other high‑efficiency switching applications (where device ratings allow)
Package
Leadless surface-mount package: D2PAK (TO-263) style (Pb-free).
