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IRF6644TRPBF
+BOMMOSFET N-CH 100V 10.3A DIRECTFET
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRF6644TRPBF
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데이터시트 IRF6644TRPBF DataSheet
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사양
| 속성 | 가치 |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 10.3A (Ta), 60A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 13mOhm @ 10.3A, 10V |
| Vgs(th)(Max) @ Id | 4.8V @ 150µA |
| Gate Charge(Qg)(Max) @ Vgs | 47 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2210 pF @ 25 V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ MN |
개요
Description
Key specifications include:
- Voltage Rating: Typically, it has a drain-source voltage (V_DS) of around 150V.
- Current Rating: The continuous drain current (I_D) can be notably high, suitable for handling substantial power loads.
- Package: It often comes in a D2PAK or TO-263 package, which supports efficient thermal management.
- Temperature: It can operate efficiently across a broad temperature range, enhancing its versatility in various environments.
The IRF6644TRPBF is part of a family of MOSFETs that are optimized for low conduction losses and reliable performance, making it a popular choice in modern electronic systems requiring robust power handling capabilities.
Equivalent
1. FDP7045 by ON Semiconductor
2. NTMFS5C404NL by ON Semiconductor
3. STP75NF75 by STMicroelectronics
These alternatives should be checked for compatibility in your specific application, considering parameters like voltage, current ratings, R_DS(on), and package type. Always consult the datasheets to verify the suitability for your circuit.
Features
1. Voltage & Current: It has a drain-to-source voltage (Vds) of 40V and a continuous drain current (Id) of 46A, making it suitable for medium voltage applications.
2. RDS(on): The MOSFET offers a low on-resistance, typically 13.5 mΩ at 10V gate-source voltage, which minimizes power loss and heat generation.
3. Package: It comes in a D2PAK (TO-263) package, which is surface-mountable for efficient heat dissipation and compact designs.
4. Performance: It supports fast switching speeds, enhancing performance in high-frequency applications.
5. Temperature Range: The device operates over a wide temperature range, supporting reliable functionality in diverse environmental conditions.
6. Applications: Suitable for applications like DC-DC converters, motor drives, and other power management systems due to its efficiency and reliability.
These features make the IRF6644TRPBF a versatile component for designing robust electronic circuits.
Pinout
Here is a brief description of the pin functions:
1. Pins 1, 2, 3, and 4: These are typically connected to the Source (S) terminal. In some configurations, they may be unified as a single source connection to handle higher current.
2. Pin 5: The Gate (G) terminal, which controls the MOSFET's switching operation.
3. Pins 6, 7, and 8: These are connected to the Drain (D) terminal. Similar to the Source pins, they are often connected together for better current handling.
The IRF6644TRPBF is commonly used in applications requiring efficient power management, such as DC-DC converters, power supply circuits, and motor control systems.
Manufacturer
Application
1. Power Supply Units: Used in DC-DC converters, switching power supplies, and uninterruptible power supplies (UPS) for efficient power management.
2. Automotive Systems: Suitable for engine control, electric power steering, and other automotive electronics due to its robustness and reliability.
3. Motor Control: Used in industrial and consumer motor control applications for improved power efficiency and performance.
4. Renewable Energy: Employed in solar inverters and other energy conversion systems to enhance efficiency.
5. Telecommunications: Integrated into power management systems for telecommunications infrastructure.
These applications benefit from its low on-resistance and fast switching capabilities.