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IRF7204TRPBF
+BOMMOSFET P-CH 20V 5.3A 8SO
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRF7204TRPBF
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데이터시트 IRF7204TRPBF DataSheet
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패키지 SOIC-8
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Last Time Buy |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 5.3A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 60mOhm @ 5.3A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 860 pF @ 10 V |
| Power Dissipation (Max) | 2.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
개요
Description
- Voltage Rating: 40V
- Current Rating: 12.4A (continuous)
- Low On-Resistance (RDS(on)): 36mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-speed performance
- Package: D2PAK (TO-263), suitable for surface-mount PCB designs
Commonly used in DC-DC converters, motor control, and power management circuits, it offers robust performance with low conduction losses. The device is lead-free and RoHS-compliant, making it environmentally friendly.
For detailed specs, refer to the datasheet.
Equivalent
- IRF7204PBF (Same specs, different packaging)
- IRF7404TRPBF (Similar, 30V, 13A)
- IRF7416TRPBF (30V, 13A, lower Rds(on))
- STP16NF06L (60V, 16A, comparable)
- FQP12N40L (400V, 12A, higher voltage)
Check datasheets for exact compatibility in your circuit.
Features
- Voltage Rating: 40V
- Current Rating: 12.7A (continuous)
- Low On-Resistance (RDS(on)): 22mΩ @ VGS=10V
- Fast Switching: Optimized for high-speed applications
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Low Gate Charge (Qg): 18nC (typical)
- Avalanche Energy Rated: Robust against transient spikes
- Package: D2PAK (TO-263) for efficient power dissipation
- Applications: Power management, DC-DC converters, motor control
Compact, efficient, and suitable for high-performance switching.
Pinout
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Ground/reference terminal.
Key Features:
- N-channel MOSFET
- VDSS: 40V
- ID: 40A (continuous)
- Low RDS(on): ~4.5mΩ (at VGS = 10V)
Commonly used in power switching, motor control, and DC-DC converters.
Application
1. Power Management – Switching and load switching in DC-DC converters.
2. Battery Protection – Reverse polarity and discharge control.
3. Motor Control – Driving small motors in automotive and industrial systems.
4. Portable Electronics – Power switching in smartphones, tablets, and wearables.
5. Automotive Applications – LED lighting and infotainment systems.
Its low on-resistance (RDS(on)) and compact package (SO-8) make it ideal for space-constrained, high-efficiency designs.