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IRF7530TRPBF
+BOMMOSFET 2N-CH 20V 5.4A MICRO8
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제조업체인피니티 테크놀로지
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제조업체 부품 #IRF7530TRPBF
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재고4005
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사양
| 속성 | 가치 |
| Series | HEXFET® |
| PartStatus | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 5.4A |
| RdsOn(Max)@Id,Vgs | 30mOhm @ 5.4A, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 26nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 1310pF @ 15V |
| Power-Max | 1.3W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| SupplierDevicePackage | Micro8™ |
| BaseProductNumber | IRF7530 |
개요
Description
This MOSFET is characterized by fast switching speeds and high thermal stability, allowing for efficient performance in demanding conditions. The IRF7530TRPBF is housed in a TO-220 package, facilitating easy heat dissipation and mounting. Its gate threshold voltage (V_GS(th)) is relatively low, enabling it to be driven easily by standard gate drivers.
The "TRPBF" designation indicates that the part is RoHS-compliant, making it environmentally friendly. Overall, the IRF7530TRPBF is a reliable choice for designers seeking robust performance in compact electronic designs.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: The continuous drain current (Id) is up to 70A, allowing it to handle significant load currents.
3. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 1V to 2.5V, facilitating easy drive with low-voltage logic levels.
4. Low On-Resistance: With an Rds(on) of approximately 11 mΩ at Vgs = 10V, it minimizes conduction losses and improves efficiency.
5. Fast Switching Speed: This MOSFET supports fast switching characteristics, beneficial for applications like switching power supplies and motor control.
6. Package Type: It comes in a TO-220 package, which provides good thermal performance for heat dissipation.
These features make the IRF7530TRPBF suitable for various applications in power management and control.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the MOSFET on or off, allowing current to flow between the drain and source.
2. Drain (D): This is where the current enters the MOSFET from the load. The drain connects to the positive side of the load in a typical application.
3. Source (S): This pin is connected to the ground or negative side of the circuit. Current exits the MOSFET through the source when the device is on.
The IRF7530TRPBF is designed for high-speed switching applications and is suitable for use in power management and motor control circuits. It has a low R_DS(on) for efficient operation.
Manufacturer
Application
1. Power Management: Employed in DC-DC converters and power supplies for efficient switching.
2. Motor Control: Utilized in motor drivers for controlling speed and direction in electric motors.
3. Load Switching: Acts as a switch for connecting/disconnecting loads in electronic circuits.
4. Battery Management: Used in battery charging circuits for efficient power delivery.
5. Amplifiers: Integrated in audio and RF amplifiers for signal amplification.
These applications benefit from its low on-resistance and fast switching capabilities.